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MT47H64M16NF-25E IT:M

Name: MT47H64M16NF-25E IT:M
Rating: 4.7 (12 reviews)

1.7V~1.9V 1Gbit 400MHz DDR2 SDRAM FBGA-84 Memory (ICs) RoHS

Производитель
Мфр. Часть #MT47H64M16NF-25E IT:M
Пакет
Лист данных
В наличии14604

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Спецификации

Packaging	FBGA-84
Clock Frequency	400MHz
Current - Supply	60mA
Memory Format	DDR2 SDRAM
Memory Size	1Gbit
Operating temperature	-40℃~+95℃
Refresh Current	2mA
Voltage - Supply	1.7V~1.9V

Обзор

Description

The MT47H64M16NF-25E is a DRAM (Dynamic Random Access Memory) chip manufactured by Micron Technology. Specifically, it is a 1Gb (gigabit) DDR3 SDRAM device organized as 64 Meg x 16 bits. This memory chip operates at a speed grade of 25 ns, which denotes its access speed.
The "IT" in the part number typically indicates that the chip is designed for industrial temperature ranges, making it suitable for harsh environmental conditions, with operating temperatures from -40°C to +95°C.
This component is commonly used in various applications, including telecommunications, automotive, and industrial systems, where reliability and durability are crucial. Its features include low power consumption, high-speed operation, and compatibility with standard DDR3 interfaces, making it a versatile choice for modern electronic systems.

Features

The MT47H64M16NF-25E IT:M is a DDR3 SDRAM memory chip from Micron Technology. It has a capacity of 1GB (64 Meg x 16 bits) and operates at a clock frequency of up to 800 MT/s (megatransfers per second). Key features include:
1. Process Technology: Built on a 25nm fabrication process, which enhances performance and power efficiency.
2. Voltage: Operates at a low voltage of 1.5V, supporting energy-efficient designs.
3. Configuration: Organized as 64M x 16, enabling a wide data bus for better throughput.
4. Data Rate: Supports DDR3 data rates up to 1600 MT/s.
5. Package: Available in a compact FBGA (Fine-Pitch Ball Grid Array) package, facilitating integration into various electronic devices.
6. Applications: Suitable for use in computing, networking, and consumer electronics.
This chip is designed for high-performance applications requiring reliable memory solutions with low power consumption.

Package

The MT47H64M16NF-25E IT:M is typically packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type provides a compact design suitable for high-density applications in mobile devices and other electronics.

Pinout

The MT47H64M16NF-25E IT:M is a DRAM memory chip with a pin count of 78. It is a DDR3 SDRAM device configured as 64 Meg x 16 bits. The main functions of this chip include data storage and retrieval in computing systems, providing high-speed memory access with a 25 ns cycle time.
The pins on the chip include data lines, address lines, power supply pins, and control signals (such as chip enable, write enable, and clock) that manage data flow and synchronization within the memory module. This DRAM is designed for applications requiring high-performance memory, commonly found in laptops, desktops, and servers.

Manufacturer

The manufacturer of the MT47H64M16NF-25E IT:M is Micron Technology, Inc. Micron is a leading American producer of semiconductor devices, specializing in memory and storage solutions, including DRAM, NAND flash memory, and other memory products. Founded in 1978 and headquartered in Boise, Idaho, Micron operates globally and serves various markets, including computing, mobile, automotive, and industrial sectors. The company is known for its innovation in memory technology and plays a significant role in the semiconductor industry.

Application

The MT47H64M16NF-25E IT:M is a DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics, networking equipment, telecommunications, automotive systems, and industrial applications. Its high-speed performance and reliability make it suitable for devices requiring efficient data processing, such as laptops, servers, and embedded systems.

Equivalent

The MT47H64M16NF-25E IT:M chip, a 1Gb DDR3 SDRAM, has several equivalent products, including the Hynix H5TQ1G83EFR and Samsung K4B4G1646E. Other alternatives may include Micron's MT41K256M16 and SK Hynix H5TQ1G83CFR. Always verify specific requirements like speed, voltage, and configuration before substituting.

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ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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