Изображения являются только для ссылки

MT41K512M8RH-125 IT:E

Name: MT41K512M8RH-125 IT:E
Rating: 4.7 (12 reviews)

DRAM

Производитель
Мфр. Часть #MT41K512M8RH-125 IT:E
Пакет
Лист данных MT41K512M8RH-125 IT:E DataSheet
В наличии9376

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Обзор

Description

The MT41K512M8RH-125 IT:E is a DDR3 DRAM memory chip manufactured by Micron Technology. It features a density of 4GB, organized as 512 Meg x 8 bits. This component operates at a data rate of 1600 MT/s and has a low voltage supply of 1.35V, making it energy-efficient.
The "RH" in the part number indicates that it is a DDR3 SDRAM with a specific package type, while the "IT" signifies it is designed for industrial temperature ranges. The suffix ":E" denotes that it complies with specific environmental regulations, such as RoHS (Restriction of Hazardous Substances).
This memory chip is suited for various applications, including servers, networking equipment, and industrial systems, thanks to its reliability and performance. It supports a wide range of operating temperatures and is optimized for high-bandwidth memory tasks.

Features

The MT41K512M8RH-125 IT:E is a DDR3 SDRAM memory chip produced by Micron Technology. Here are its key features:
1. Capacity: 4GB (512M x 8 bits) configuration.
2. Technology: DDR3 SDRAM, which supports higher bandwidth and lower power consumption compared to previous DDR generations.
3. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
4. Voltage: 1.5V standard operating voltage, with support for a low-power option at 1.35V.
5. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
6. Latency: CL=11 for performance efficiency.
7. Error Correction: Supports ECC (Error Correction Code) for enhanced reliability.
8. Operating Temperature: Industrial temperature grade, suitable for extended temperature environments.
9. Applications: Ideal for use in networking, telecommunications, and industrial applications requiring robust memory performance.
This chip is designed for applications needing reliable and efficient memory solutions with the ability to handle demanding data tasks.

Package

The MT41K512M8RH-125 IT:E is packaged in a 78-ball FBGA (Fine Ball Grid Array) form factor. This type of package is designed for high-density memory applications, offering compact size and efficient thermal performance.

Pinout

The MT41K512M8RH-125 IT:E is a DRAM memory chip from Micron Technology, specifically a DDR3 SDRAM. It features a pin count of 78.
The primary functions of the pins include:
- Data Pins: For data input/output (DQ).
- Address Pins: To select memory locations (A0-A12).
- Control Pins: Such as Chip Select (CS), Write Enable (WE), and Read Enable (RE) to manage read/write operations.
- Clock Pins: For synchronization of data transfer (CLK, CLK#).
- Power and Ground Pins: For supplying voltage and grounding the chip.
This chip is designed for high-performance applications, providing a data rate of up to 1600 MT/s. It operates at a voltage of 1.5V and is commonly used in various computing and embedded systems.

Manufacturer

The manufacturer of the MT41K512M8RH-125 IT:E is Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in memory and storage solutions, including DRAM, NAND flash memory, and 3D XPoint memory. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets such as computing, mobile, automotive, and industrial sectors. The company is known for its innovation in memory technologies and plays a significant role in the global semiconductor industry, supplying products that power a wide range of electronic devices.

Application

The MT41K512M8RH-125 IT:E is a DDR3 SDRAM memory chip designed for various applications, including server memory, networking equipment, consumer electronics, industrial computing, and embedded systems. Its high density and performance make it suitable for data-intensive tasks in computing and telecommunications, as well as for use in high-performance graphics and gaming applications.

Equivalent

The MT41K512M8RH-125 IT:E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83EFR-PBC
2. Samsung K4B4G0846D-BCH9
3. Micron MT41K512M8HA-125
Always check specifications for compatibility based on voltage, timing, and configuration.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.