Изображения являются только для ссылки

MT41K256M16TW-125:P

Name: MT41K256M16TW-125:P
Rating: 4.7 (12 reviews)

IC DRAM 4GBIT PARALLEL 96FBGA

Производитель
Мфр. Часть #MT41K256M16TW-125:P
Пакет
Лист данных
В наличии2141

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Part Status	Obsolete
Base Product Number	MT41K256M16
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3L
Memory Size	4Gbit
Memory Organization	256M x 16
Memory Interface	Parallel
Clock Frequency	800 MHz
Voltage - Supply	1.283V ~ 1.45V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	96-TFBGA
Supplier Device Package	96-FBGA (8x14)
Packaging	Tray
Access Time	20 ns

Обзор

Description

The MT41K256M16TW-125:P is a DRAM memory chip produced by Micron Technology. It belongs to the DDR3 SDRAM family, specifically a 2Gb (gigabit) component organized as 256M x 16 bits. The "125" in the part number indicates a maximum clock speed of 1250 MHz, while the "P" signifies that it is a Pb-free (lead-free) package, compliant with environmental regulations.
Key features include low power consumption, making it suitable for mobile and high-performance computing applications. The chip operates at a voltage of 1.5V, offering improved energy efficiency compared to older DRAM technologies. The MT41K256M16TW-125:P is commonly used in various devices, including laptops, desktops, and servers, providing reliable and high-speed memory performance for demanding applications. Its compact design and adherence to industry standards allow for easy integration into various electronic systems.

Features

The MT41K256M16TW-125:P is a DDR3 SDRAM memory chip produced by Micron Technology. It features a 2Gb (256M x 16) capacity, organized in a 16-bit wide configuration. Key specifications include a data rate of 1600 MT/s, a supply voltage of 1.5V, and an I/O voltage of 1.5V as well. The device supports a CAS latency of CL11 and operates with a maximum transfer bandwidth of 12.8 GB/s.
This memory chip utilizes a 78-ball FBGA package and is designed for use in various applications, including desktops, laptops, and servers. It includes built-in self-test (BIST) capabilities for improved reliability and performance. The MT41K256M16TW-125:P also features advanced power-saving modes, enhancing energy efficiency. It is RoHS compliant and suitable for high-performance computing environments, making it a reliable choice for modern memory solutions.

Package

The MT41K256M16TW-125:P is packaged in a 78-ball FBGA (Fine Ball Grid Array) configuration.

Pinout

The MT41K256M16TW-125:P is a DDR3 SDRAM memory chip with a total pin count of 78. This chip features a 2Gb (256M x 16) density and operates at a data rate of 1600 MT/s.
Key functions of the pins include:
- Data Pins (DQ): 16 data pins for read/write operations.
- Address Pins (A): Used to select memory locations.
- Control Pins: Includes signals like Chip Select (CS), Write Enable (WE), and Read Enable (RE) for controlling memory operations.
- Clock Pins (CK, CK#): Differential clock inputs for timing.
- Power Supply Pins: Supply voltage (VDD) and ground (VSS).
- Mode Register Set (MRS) Pins: For configuring the memory's operational parameters.
The chip supports various features such as on-die termination (ODT) and is compliant with the DDR3 SDRAM standard, making it suitable for a wide range of applications in consumer electronics and computing devices.

Manufacturer

The manufacturer of the MT41K256M16TW-125:P is Micron Technology, Inc. Micron is an American company that specializes in semiconductor manufacturing, particularly in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various sectors, such as computing, mobile devices, automotive, and enterprise applications. Micron is known for its innovation in memory technologies and plays a significant role in the global semiconductor industry.

Application

The MT41K256M16TW-125:P is a 4GB DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, desktop computers, laptops, networking devices, and industrial equipment. Its high-speed performance and capacity make it suitable for gaming systems, servers, and embedded systems that require efficient data processing and storage.

Equivalent

The MT41K256M16TW-125:P chip is a 4Gb DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ4G83CFR-PBA
2. Samsung K4B4G1646F-BCK0
3. Micron MT41K256M16HA-125
4. Nanya NT5CB256M16DP-DI
Always verify compatibility and specifications before substitution.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.