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MT41J256M8HX-15E:D

Name: MT41J256M8HX-15E:D
Rating: 4.7 (12 reviews)

IC DRAM 2GBIT PAR 78FBGA

Производитель
Мфр. Часть #MT41J256M8HX-15E:D
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Спецификации

Part Status	Obsolete
Base Product Number	MT41J256M8
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3
Memory Size	2Gbit
Memory Organization	256M x 8
Memory Interface	Parallel
Clock Frequency	667 MHz
Voltage - Supply	1.425V ~ 1.575V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	78-TFBGA
Supplier Device Package	78-FBGA (9x11.5)
Packaging	Tray
Access Time	13.5 ns

Обзор

Description

The MT41J256M8HX-15E:D is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology. It features a density of 2 Gigabytes (GB) and operates on an 8-bit data bus. This chip is built using a 256M x 8 configuration, which means it has 256 million memory cells, organized in 8-bit wide sections.
Key specifications include a maximum data transfer rate of 1600 MT/s (mega transfers per second) and operates at a voltage of 1.5V, which is standard for DDR3 memory. The suffix "-15E" indicates the time latency, with a CAS latency of 15 at 1600 MHz. This memory chip is commonly used in various applications, including personal computers, servers, and embedded systems, where high speed and efficient memory performance are essential. It is available in a BGA (Ball Grid Array) package for easy integration into circuit boards.

Features

The MT41J256M8HX-15E is a DDR3 SDRAM memory chip from Micron Technology, designed for high-performance computing applications. Here are key features:
1. Density: 2GB (256Mx8).
2. Organization: 8-bit wide data I/O.
3. Speed Grade: Operates at a clock frequency of up to 1.5 GHz (DDR3-1600).
4. Voltage: Operates at a low voltage of 1.5V, with options for 1.35V (DDR3L).
5. Package Type: Available in a 78-ball FBGA package for compact integration.
6. Burst Length: Supports burst lengths of 8 and 4.
7. Features: Includes on-die termination (ODT) and self-refresh capabilities for power efficiency.
8. Applications: Suitable for various applications including PCs, servers, and networking devices.
This chip is optimized for high bandwidth and low power consumption, making it ideal for modern electronic devices that require efficient memory solutions.

Package

The MT41J256M8HX-15E:D is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.

Pinout

The MT41J256M8HX-15E:D is a DDR3 SDRAM memory chip with a pin count of 78. This memory device is organized as 256 Meg x 8 bits, providing a total capacity of 2 Gigabits.
Key functions of the pin configuration include:
- Data pins (DQ0-DQ7): Used for bi-directional data transfer.
- Address pins (A0-A12, BA0-BA2): For selecting the memory addresses and bank.
- Control pins (CS, RAS, CAS, WE): For controlling read/write operations and enabling the chip.
- Clock pins (CK, CK#): For synchronization of data transfers.
- Power/ground pins: For supplying power to the chip (VDD, VSS, etc.).
This chip is designed for high-speed data access and is commonly used in various applications, including computing and communication devices.

Manufacturer

The manufacturer of the MT41J256M8HX-15E:D is Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor components, particularly memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the world's leading manufacturers of DRAM, NAND flash memory, and other memory technologies. The MT41J256M8HX-15E:D is a DDR3 DRAM chip used in various applications, including computers, servers, and mobile devices. Micron serves a diverse range of markets, including consumer electronics, automotive, industrial, and networking.

Application

The MT41J256M8HX-15E:D is a DDR3 SDRAM memory chip commonly used in various applications such as consumer electronics, laptops, desktops, servers, and networking devices. Its high-density and efficient performance make it suitable for gaming consoles, industrial equipment, and automotive electronics, providing reliable data storage and fast access speeds in high-performance computing environments.

Equivalent

The MT41J256M8HX-15E:D chip, a DDR3 SDRAM memory module with a density of 2GB, can have equivalent products such as Hynix H5TQ1G83AFR, Samsung K4B4G0846D-BYK0, and Micron MT41K256M16HA-125. These alternatives should match specifications like speed, density, and pin configuration. Always verify compatibility with your specific application.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.