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MT29F256G08CECEBJ4-37ITR:E

Name: MT29F256G08CECEBJ4-37ITR:E
Rating: 4.7 (12 reviews)

IC FLASH 256GBIT PAR 132VBGA

Производитель
Мфр. Часть #MT29F256G08CECEBJ4-37ITR:E
Пакет
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Спецификации

Part Status	Obsolete
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND (MLC)
Memory Size	256Gbit
Memory Organization	32G x 8
Memory Interface	Parallel
Clock Frequency	267 MHz
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	132-VBGA
Supplier Device Package	132-VBGA (12x18)
Base Product Number	MT29F256G08

Обзор

Description

The MT29F256G08CECEBJ4-37ITR:E is a NAND Flash memory chip manufactured by Micron Technology. It features a density of 256 Gigabits (32 Gigabytes) and operates at a voltage range of 2.7V to 3.6V. This device is designed for high-performance storage applications, offering fast read and write speeds, making it suitable for mobile devices, SSDs, and other consumer electronics.
Key features include:
- Form Factor: Typically available in a BGA (Ball Grid Array) package.
- Interface: Supports ONFI (Open NAND Flash Interface) for improved compatibility and performance.
- Endurance: Designed for high endurance with a significant number of program/erase cycles.
- Data Retention: Ensures reliable data retention for several years, typically ranging from 10 to 20 years under proper conditions.
This chip is ideal for applications requiring high-density storage solutions with a focus on speed and reliability.

Features

The MT29F256G08CECEBJ4-37ITR:E is a 256Gb (32GB) NAND Flash memory device manufactured by Micron Technology. Key features include:
1. Interface: It uses a ONFI 1.0/2.0 interface for high-speed data transfer.
2. Density: Offers 256 Gigabits of storage capacity.
3. Organization: Typically organized as 2048 pages of 128 bytes each (or 64 pages of 2KB).
4. Read Speed: Supports fast read speeds, enhancing system performance.
5. Write/Erase Cycles: Designed for high endurance, supporting numerous write/erase cycles.
6. Data Retention: Offers reliable data retention, typically around 10 years at 25°C.
7. Power Management: Features low power consumption modes for energy efficiency.
8. Package Type: Available in a BGA (Ball Grid Array) package format for compact designs.
This device is suitable for various applications, including mobile devices, SSDs, and embedded systems, where high-density storage and performance are essential.

Package

The MT29F256G08CECEBJ4-37ITR:E is packaged in a 48-ball FBGA (Fine Ball Grid Array) format. It features a compact design suitable for high-density applications and is optimized for low power consumption and high performance in NAND flash memory applications.

Pinout

The MT29F256G08CECEBJ4-37ITR:E is a NAND Flash memory device with a total of 48 pins. Its main functions include storing large volumes of data, with a capacity of 256 Gbit (32 GB). The device uses a NAND architecture, which allows for efficient data storage and retrieval.
Key pin functions include:
- Data Pins (DQ0-DQ7): Bi-directional data lines for data input and output.
- Command Input (CLE): Command latch enable for command input.
- Address Input (ALE): Address latch enable for address input.
- Chip Enable (CE#): Activates the chip for read/write operations.
- Write Enable (WE#): Initiates a write operation.
- Read Enable (RE#): Initiates a read operation.
- Reset (RE#): Resets the device.
- Ready/Busy (R/B#): Indicates the status of the device (ready or busy).
- Vcc and Vss: Power supply and ground pins respectively.
This device is used in various applications requiring high-density storage solutions.

Manufacturer

The manufacturer of the MT29F256G08CECEBJ4-37ITR:E is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the world's leading suppliers of semiconductor products. The company serves various markets, including computing, mobile, automotive, and industrial sectors, providing essential components for data storage and processing. Micron is known for its innovation in memory technology and plays a significant role in advancing the capabilities of electronic devices through high-performance memory and storage solutions.

Application

The MT29F256G08CECEBJ4-37ITR:E is a NAND Flash memory chip commonly used in various applications, including mobile devices, consumer electronics, embedded systems, automotive systems, and industrial applications. It is ideal for data storage in smartphones, tablets, solid-state drives (SSDs), and other devices requiring high-density, high-performance non-volatile memory solutions.

Equivalent

The MT29F256G08CECEBJ4-37ITR:E is a 256Gb NAND flash memory chip. Equivalent products may include other NAND flash chips with similar specifications, such as:
- Micron MT29F256G08CFAAWP: Same capacity but different packaging
- Samsung K9GAG08U0M: Similar capacity and technology
- Toshiba TH58TEG7D2FBA: Comparable NAND technology with 256Gb capacity
Always verify compatibility in terms of voltage, package type, and interface before substitution.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.