MT25QL512ABB1EW9-0SIT

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MT25QL512ABB1EW9-0SIT

IC FLASH 512MBIT SPI 8WPDFN

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  • Мфр. Часть #MT25QL512ABB1EW9-0SIT
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Спецификации

Part Status Active
Base Product Number MT25QL512
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 8-WDFN Exposed Pad
Supplier Device Package 8-WPDFN (8x6) (MLP8)
Packaging Tray

Обзор

Description

The MT25QL512ABB1EW9-0SIT is a high-performance NOR Flash memory device from Micron Technology, featuring a density of 512 Mb (64 MB). This device is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It supports Quad-SPI (QSPI) interface, allowing for fast data transfer rates and parallel operation, which enhances overall system performance.
Key features include a flexible memory organization, allowing for various page and sector sizes, and support for both read and write operations with low latency. The device operates over a voltage range of 2.7V to 3.6V, making it suitable for battery-operated devices. It also includes advanced features like deep power-down mode for energy efficiency and multiple programming algorithms to simplify integration.
With its robust architecture and reliability, the MT25QL512ABB1EW9-0SIT is ideal for applications that require high-speed data access and long-term data retention. Its compatibility with a variety of system architectures makes it a versatile choice for designers.

Features

The MT25QL512ABB1EW9-0SIT is a 512Mb (64MB) serial NOR Flash memory device from Micron Technology. Key features include:
1. Interface: It utilizes a Serial Peripheral Interface (SPI) supporting single, dual, and quad I/O modes for high-speed data transfer.
2. Performance: With read speeds up to 104 MHz, it provides efficient data access.
3. Density: The 512Mb capacity is suitable for a variety of applications, from automotive to consumer electronics.
4. Voltage Range: It operates within a supply voltage range of 2.7V to 3.6V.
5. Endurance and Reliability: Rated for 100,000 program/erase cycles, it ensures durability for extensive data rewriting.
6. Temperature Range: Available in industrial temperature grades, it supports reliable operation in harsh environments.
7. Power Consumption: Designed for low power consumption during both active and standby modes.
8. Erase and Write Features: Supports sector and bulk erase operations, enabling flexible data management.
These features make the MT25QL512ABB1EW9-0SIT suitable for applications requiring high-density memory with robust performance.

Package

The MT25QL512ABB1EW9-0SIT is packaged in a WSON (Wafer Level Chip Scale Package) format, specifically in a 16-lead WSON package. It is designed for high-density storage applications and optimized for space-constrained environments.

Pinout

The MT25QL512ABB1EW9-0SIT is a 512Mb (64MB) NOR Flash memory device from Micron Technology. It features a total of 32 pins.
The primary functions of these pins include:
1. Power Supply Pins: VCC (power supply) and VSS (ground).
2. Data Pins: DQ0-DQ7 for data input/output, supporting an 8-bit data interface.
3. Command Pins:
- SI (Serial Input): For command and data input.
- SO (Serial Output): For command and data output.
- SCK (Serial Clock): For synchronizing data transfer.
- CS# (Chip Select): Activates the device for communication.
4. Status Pins:
- WP# (Write Protect): Provides write protection.
- HB# (Hold): Used to hold the device in a tri-state condition.
This device operates via a serial interface and is typically utilized in applications requiring non-volatile storage.

Manufacturer

The manufacturer of the MT25QL512ABB1EW9-0SIT is Micron Technology, Inc. Micron is a major American corporation that specializes in the production of semiconductor devices, particularly memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovations in dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). The company serves a wide range of industries, including computing, mobile, consumer electronics, automotive, and industrial applications. Micron plays a significant role in the global semiconductor market, providing critical components that power various electronic devices and systems.

Application

The MT25QL512ABB1EW9-0SIT is a 512 Mb Serial NOR Flash memory primarily used in applications such as automotive, industrial control systems, consumer electronics, and networking devices. It supports execute-in-place (XIP) for efficient code execution, making it suitable for firmware storage, system boot, and data logging in embedded systems. Its high-density storage is ideal for applications requiring reliable non-volatile memory with fast read speeds.

Equivalent

The MT25QL512ABB1EW9-0SIT is a 512Mb Serial NOR Flash memory chip from Micron. Equivalent products include:
1. W25Q512JV - Winbond
2. S25FL512S - Cypress (Infineon)
3. MX25U51245G - Macronix
4. N25Q512A - Micron (also under its own brand)
Always verify compatibility based on specific application requirements such as voltage, speed, and interface.

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