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MRFE6S9205HSR3

Name: MRFE6S9205HSR3
Rating: 4.7 (12 reviews)

RF MOSFET LDMOS 28V NI880S

Производитель
Мфр. Часть #MRFE6S9205HSR3
Пакет
Лист данных MRFE6S9205HSR3 DataSheet
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Спецификации

Part Status	Obsolete
Technology	LDMOS
Frequency	880MHz
Gain	21.2dB
Voltage - Test	28 V
Current - Test	1.4 A
Power - Output	58W
Voltage - Rated	66 V
Mounting Type	Surface Mount
Package / Case	NI-880S
Supplier Device Package	NI-880S
Base Product Number	MRFE6

Обзор

Description

The MRFE6S9205HSR3 is a high-performance RF power transistor designed for use in various communications and industrial applications. It is part of the MRFE series produced by NXP Semiconductors and is typically used in RF amplifiers due to its high efficiency, wide frequency range, and robust construction.
Key features include:
- Frequency Range: Operates effectively in the UHF and VHF frequency bands, making it suitable for both linear and non-linear amplification.
- Power Output: Capable of delivering high output power, making it ideal for applications like transmitters and amplifiers in wireless communication.
- Thermal Stability: Designed with a sturdy package to enhance heat dissipation and operational reliability.
The MRFE6S9205HSR3 is commonly employed in applications such as base stations, radar systems, and other high-frequency electronic systems, ensuring excellent performance in demanding environments.
For detailed specifications, it’s advisable to refer to the manufacturer's datasheet.

Features

The MRFE6S9205HSR3 is a high-performance RF power transistor designed for use in various applications, including wireless and broadband communication systems. Key features include:
1. Frequency Range: Operates effectively up to 1 GHz, suitable for high-frequency applications.
2. Output Power: Capable of delivering up to 60 watts of output power, making it ideal for base stations and amplifiers.
3. Gain: High power gain typical of around 15 dB, enhancing signal amplification efficiency.
4. Efficiency: Designed for high efficiency, which helps minimize heat generation and power consumption.
5. Package: Housed in a robust package (typically a metal can), ensuring durability and effective heat dissipation.
6. Wide Operating Voltage: Supports a wide range of supply voltages, accommodating various circuit designs.
Overall, the MRFE6S9205HSR3 is well-suited for demanding RF applications, offering reliability and performance in a compact form.

Package

The MRFE6S9205HSR3 is packaged in a surface-mount-type package, specifically designed for RF applications. It typically comes in an LGA (Land Grid Array) package format, facilitating efficient thermal management and compact design in electronic circuits.

Pinout

The MRFE6S9205HSR3 is a high-power RF transistor designed for applications in the HF and VHF frequency ranges. It comes in a surface-mount package with a pin count of 7.
Pin Functions:
1. Pin 1: Gate (G) - Controls the transistor's switching.
2. Pin 2: Source (S1) - Connects to the source circuit.
3. Pin 3: Drain (D1) - Connects to the drain circuit for RF output.
4. Pin 4: Source (S2) - Additional source connection.
5. Pin 5: Drain (D2) - Another drain connection for enhanced RF output.
6. Pin 6: N/C - No connection.
7. Pin 7: N/C - No connection.
This device is typically used in linear applications, such as amplifiers, and is known for its high efficiency and wide frequency range capabilities.

Manufacturer

The MRFE6S9205HSR3 is manufactured by NXP Semiconductors. NXP is a global semiconductor company that specializes in designing and manufacturing integrated circuits, including RF power transistors and other electronic components. The company focuses on various markets such as automotive, industrial, and communications, providing solutions for applications ranging from connected vehicles to smart cities and IoT devices. NXP is known for its innovation in secure connectivity and processing solutions, positioning itself as a leader in the semiconductor industry.

Application

The MRFE6S9205HSR3 is a high-power RF transistor commonly used in applications such as RF amplification in telecommunications, industrial RF heating, and satellite communication systems. Its high efficiency and power handling capabilities make it suitable for use in broadband amplifiers, radar systems, and other high-frequency applications.

Equivalent

The MRFE6S9205HSR3 is a high-power RF transistor. Equivalent products include the MRF6VP3200H, MRF6VP4200H, and BLF578. These alternatives may have similar specifications for RF amplification in applications like broadcast and industrial RF systems. Always verify parameters such as frequency range, power output, and thermal characteristics before substituting.

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