Изображения являются только для ссылки

MRF1517NT1

Name: MRF1517NT1
Rating: 4.7 (12 reviews)

FET RF 25V 520MHZ PLD-1.5

Производитель
Мфр. Часть #MRF1517NT1
Пакет PLD-1.5
Лист данных MRF1517NT1 DataSheet
В наличии5098

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Obsolete
TransistorType	LDMOS
Frequency	520MHz
Gain	14dB
Voltage-Test	7.5 V
CurrentRating(Amps)	4A
Current-Test	150 mA
Power-Output	8W
Voltage-Rated	25 V
Package/Case	PLD-1.5

Обзор

Description

The MRF1517NT1 is a high-performance RF power transistor designed for use in a variety of applications, including RF amplification in commercial and industrial settings. It operates in the UHF frequency range, specifically tailored for 1.5 to 1.8 GHz, making it suitable for communication systems, satellite uplinks, and broadcast transmitters.
Key features include its capability to deliver high output power while maintaining efficiency, making it ideal for linear amplification. The device typically supports a 50-ohm system and is housed in a robust package, ensuring reliability in demanding environments.
With a maximum output power of around 20 watts, the MRF1517NT1 is optimized for excellent thermal performance and can be used in both Class AB and Class C amplifier configurations. It is important for designers to consider the appropriate biasing and matching techniques to achieve optimal performance. Overall, the MRF1517NT1 is a versatile choice for RF designers looking for efficiency and reliability in their systems.

Features

The MRF1517NT1 is a high-performance RF power transistor designed for use in RF amplification applications, particularly in the 150 MHz to 175 MHz frequency range. Key features include:
1. Power Output: Capable of delivering high output power, typically around 20-30 watts, making it suitable for various communication systems.

2. Frequency Range: Optimized for operation within the 150-175 MHz range, ideal for VHF applications.
3. Gain: Offers a high power gain, enhancing overall efficiency in RF amplification.
4. Durability: Constructed with robust materials to withstand operational stresses and ensure long-term reliability.
5. Package Type: Available in a metal can package, facilitating effective heat dissipation and enhancing thermal performance.
6. Impedance Matching: Designed for easy integration into RF circuitry with standard input/output impedance.
These features make the MRF1517NT1 suitable for use in various RF applications, including mobile radio and base station transmitters.

Package

The MRF1517NT1 is housed in a TO-220 package type. This package is designed for high-power applications, providing excellent thermal performance and ease of handling in circuit designs.

Pinout

The MRF1517NT1 is a high-power N-channel MOSFET designed for RF power amplification applications. It features a total of 6 pins.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load, where the output power is delivered.
3. Source (S) - Ground reference for the device; it is the return path for current.
4. Drain (D) - Another pin serving the same function as pin 2, providing redundancy.
5. Gate (G) - Another pin that serves the same function as pin 1, providing redundancy.
6. Source (S) - Another pin that serves the same function as pin 3, providing redundancy.
This redundancy in pin configuration allows for improved thermal management and flexibility in circuit design. The device is typically used in applications operating in the frequency range of 1.8 to 30 MHz.

Manufacturer

The MRF1517NT1 is manufactured by NXP Semiconductors, a global semiconductor company that specializes in the design and production of a wide range of electronic components. NXP is known for its expertise in automotive, industrial, mobile, and communication applications. The company develops products that include microcontrollers, processors, sensors, and RF components, serving various markets such as automotive, smart home, and Internet of Things (IoT). NXP was formed in 2006 as a spinoff from Philips and has since become a key player in the semiconductor industry, focusing on innovation and expanding its technology portfolio to meet the demands of modern electronics.

Application

The MRF1517NT1 is a high-power N-channel MOSFET primarily used in RF power amplification applications. Its key areas include cellular base stations, industrial RF applications, and any high-frequency RF circuits. It is known for its efficiency in amplifying signals in the 1.8 to 2.0 GHz range, making it suitable for use in various wireless communication systems.

Equivalent

The MRF1517NT1 is a high-power RF transistor. Equivalent products include:
1. MRF1517
2. MRF1518
3. MRF1516
4. MRFX1K50
5. BLF578
Always check specifications for compatibility in your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.