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MMUN2212LT1G

Name: MMUN2212LT1G
Rating: 4.7 (12 reviews)

TRANS PREBIAS NPN 50V SOT23-3

Производитель
Мфр. Часть #MMUN2212LT1G
Пакет TO-236-3, SC-59, SOT-23-3
Лист данных MMUN2212LT1G DataSheet
В наличии3922

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Гарантия 365 дней

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Спецификации

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	NPN - Pre-Biased
Current-Collector(Ic)(Max)	100 mA
Voltage-CollectorEmitterBreakdown(Max)	50 V
Resistor-Base(R1)	22 kOhms
Resistor-EmitterBase(R2)	22 kOhms
DCCurrentGain(hFE)(Min)@IcVce	60 @ 5mA, 10V
VceSaturation(Max)@IbIc	250mV @ 300µA, 10mA
Current-CollectorCutoff(Max)	500nA
Power-Max	246 mW
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

Обзор

Description

MMUN2212LT1G is a course that typically focuses on the principles and practices of Model United Nations (MUN) and international diplomacy. It emphasizes the skills needed for effective participation in MUN conferences, including research, negotiation, public speaking, and critical thinking. Students engage in simulations of UN committees, representing different countries and addressing global issues such as peace and security, human rights, and sustainable development.
The course aims to enhance participants' understanding of international relations, the workings of the United Nations, and the complexities of global governance. It also fosters teamwork and collaboration, as students often work in groups to prepare position papers, draft resolutions, and engage in debates. Overall, MMUN2212LT1G serves as an introduction to the dynamic field of international diplomacy, preparing students for further studies or careers in international relations, public policy, or related fields.

Features

The MMUN2212LT1G is a highly integrated, low-power voltage regulator from ON Semiconductor, designed for various applications. It features a wide input voltage range, typically from 2.5V to 5.5V, making it suitable for battery-operated devices. The regulator provides a fixed output voltage, with options such as 1.2V, 1.8V, and 3.3V, ensuring stable performance across various load conditions.
Key features include low quiescent current, which enhances battery life, and low dropout voltage, allowing for efficient operation even when input voltage is close to output voltage. It also incorporates overcurrent protection and thermal shutdown for enhanced reliability. The MMUN2212LT1G is packaged in a compact SOT-23 form factor, facilitating easy integration into space-constrained designs. Its performance characteristics make it ideal for consumer electronics, IoT devices, and portable applications.

Package

The MMUN2212LT1G is packaged in a SOT-23 (Small Outline Transistor) format.

Pinout

The MMUN2212LT1G is a N-channel MOSFET from ON Semiconductor with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin controls the MOSFET operation by applying a voltage to turn it on or off.
2. Drain (D): This pin connects to the load and is where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the lower potential in the circuit.
The MMUN2212LT1G is designed for low-voltage applications, offering high-speed switching and low on-resistance, making it suitable for various applications such as power management and signal switching in electronic circuits.

Manufacturer

The MMUN2212LT1G is manufactured by ON Semiconductor, a company known for its focus on semiconductor solutions. ON Semiconductor specializes in a wide range of products, including analog, digital, and mixed-signal semiconductors, as well as power management devices and sensors. The company serves various industries, such as automotive, industrial, consumer electronics, and communication. ON Semiconductor is recognized for its commitment to innovation and sustainability in the semiconductor market. The MMUN2212LT1G is commonly used in applications like RF amplification and switching in communication devices.

Application

The MMUN2212LT1G is a low-noise, high-performance operational amplifier commonly used in applications such as audio equipment, signal conditioning, active filters, and precision instrumentation. Its features make it suitable for medical devices, industrial sensors, and automotive systems, where accurate signal processing and low distortion are critical.

Equivalent

The MMUN2212LT1G is a dual N-channel MOSFET. Equivalent products include the BSS123, 2N7000, and SI2302. These options offer similar electrical characteristics and are commonly used in similar applications. Always verify specifications to ensure compatibility for your specific requirements.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.