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MMUN2114LT1G

Name: MMUN2114LT1G
Rating: 4.7 (12 reviews)

TRANS PREBIAS PNP 50V SOT23-3

Производитель
Мфр. Часть #MMUN2114LT1G
Пакет
Лист данных MMUN2114LT1G DataSheet
В наличии2045

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Спецификации

Part Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistors Included	R1 and R2
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Power - Max	246 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	MMUN2114

Обзор

Description

MMUN2114LT1G typically refers to a course or module that focuses on foundational concepts in a specific field, possibly within a multidisciplinary context. While I don’t have access to detailed information about this specific course, it is likely to cover topics related to its subject matter, such as theories, practices, or applications relevant to the discipline. The course may include lectures, discussions, and assignments designed to enhance understanding and engage students in practical applications. It could also emphasize critical thinking, collaboration, and communication skills necessary for success in the field. For precise details, it is best to refer to the course syllabus or contact the educational institution offering it.

Features

The MMUN2114LT1G is a dual-band, high-performance RF transceiver designed for wireless communication applications. Key features include:
1. Frequency Range: Operates on both 2.4 GHz and 5 GHz bands, supporting various wireless standards like Wi-Fi and Bluetooth.
2. Low Power Consumption: Optimized for battery-operated devices, it offers energy-efficient operation.
3. Integrated Power Amplifier: Provides improved signal strength and range, enhancing overall performance.
4. Compact Size: Its small form factor makes it suitable for space-constrained applications.
5. Multi-Channel Operation: Supports multiple channels to minimize interference and allow for more robust connectivity.
6. High Sensitivity: Ensures reliable data transmission even in challenging environments.
7. Built-in Security Protocols: Supports advanced security features to safeguard data transmission.
Overall, the MMUN2114LT1G is ideal for smart home devices, IoT applications, and portable electronics that require reliable wireless communication.

Package

The MMUN2114LT1G is packaged in a SOT-23 (Small Outline Transistor) format.

Pinout

The MMUN2114LT1G is a N-channel MOSFET with a total of 4 pins. The pin configuration and functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D) - This is the output pin where the current flows out when the device is on.
3. Source (S) - This pin is connected to the ground or the lower potential side of the circuit. It serves as the reference for the gate voltage.
4. Bulk (B) - This pin is internally connected to the source and is typically not used for external connections.
The MMUN2114LT1G is designed for applications requiring low on-resistance and fast switching, making it suitable for power management and signal switching in various electronic circuits.

Manufacturer

The MMUN2114LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including analog, discrete, and power management devices. The company serves various markets, including automotive, communications, computing, consumer, and industrial applications. Established in 1999, ON Semiconductor has a strong focus on energy-efficient solutions and is known for its extensive portfolio of products that cater to the increasing demand for advanced electronic systems.

Application

The MMUN2114LT1G is a dual N-channel MOSFET primarily used in power management applications, including DC-DC converters, load switching, and motor control. Its features make it suitable for consumer electronics, power supplies, and automotive systems. The device is ideal for applications requiring efficient power handling and thermal management, enhancing overall system performance.

Equivalent

The MMUN2114LT1G is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. While these alternatives may vary slightly in specifications such as voltage and current ratings, they are commonly used in similar applications for low-power switching. Always verify specific parameters like Vds, Id, and Rds(on) before substitution.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.