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MMBTA64LT1G

Name: MMBTA64LT1G
Rating: 4.7 (12 reviews)

TRANS PNP DARL 30V 0.5A SOT23-3

Производитель
Мфр. Часть #MMBTA64LT1G
Пакет SOT23-3
Лист данных
В наличии7558

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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	PNP - Darlington
Current-Collector(Ic)(Max)	500 mA
Voltage-CollectorEmitterBreakdown(Max)	30 V
VceSaturation(Max)@IbIc	1.5V @ 100µA, 100mA
Current-CollectorCutoff(Max)	100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce	20000 @ 100mA, 5V
Power-Max	225 mW
Frequency-Transition	125MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

Обзор

Description

MMBTA64LT1G is a part of NXP Semiconductors' MMBT series, specifically designed as a low-power NPN bipolar junction transistor (BJT). This transistor is commonly used in various electronic applications, including amplification and switching.
Key features include:
- Type: NPN
- Maximum Collector-Emitter Voltage (Vceo): Typically around 45V, making it suitable for various voltage applications.
- Maximum Collector Current (Ic): Up to 700mA, allowing sufficient current handling.
- Gain Bandwidth Product (fT): Generally around 100 MHz, which is indicative of its effectiveness in high-frequency applications.
- Package Type: Available in a SOT-23 package, which is compact and ideal for space-constrained applications.
This transistor is frequently found in consumer electronics, automotive applications, and industrial circuits, providing reliable performance in moderate power scenarios. Proper thermal management and adherence to electrical specifications are vital for optimal performance.

Features

The MMBTA64LT1G is a high-performance N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: Supports a drain-source voltage (V_DS) of up to 60V.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 6.5A, making it suitable for a range of applications.
3. R_DS(on): Low on-resistance (typically 0.085Ω), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically between 1V to 2.5V, allowing for low drive voltage operation.
5. Package: Offered in a compact SOT-223 package, facilitating space-saving designs.
6. Fast Switching: Optimized for fast switching speeds, making it suitable for power management and high-frequency applications.
7. Thermal Performance: Good thermal performance, allowing for effective heat dissipation in various applications.
Overall, the MMBTA64LT1G is ideal for power switching, load management, and various consumer electronics applications.

Package

The MMBTA64LT1G is packaged in a SOT-23 (Small Outline Transistor) package type. This surface-mount package is commonly used for its compact size and efficiency in various electronic applications.

Pinout

The MMBTA64LT1G is a NPN transistor packaged in a SOT-23 (3-lead) configuration. It features a pin count of 3. The primary functions of the MMBTA64LT1G include amplification and switching in various electronic circuits.
Pin Configuration:
1. Base (B) - The control terminal for the transistor, used to turn the device on or off.
2. Collector (C) - The terminal through which the main current flows when the transistor is on.
3. Emitter (E) - The terminal through which the current exits the transistor.
Typical applications include signal amplification, switching applications in low-power circuits, and integration into various electronic devices. The MMBTA64LT1G is commonly used due to its small size and efficiency in low-voltage operations.

Manufacturer

The MMBTA64LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor designs and produces a wide range of semiconductor devices, including analog, discrete, and power management products. The company serves various industries such as automotive, industrial, telecommunications, consumer electronics, and computing. Established through mergers and acquisitions, ON Semiconductor has positioned itself as a leading supplier of innovative semiconductor solutions, focusing on energy efficiency and performance.

Application

The MMBTA64LT1G is a N-channel MOSFET primarily used in low-voltage applications, including power management, battery protection, and DC-DC converters. Its compact design and low on-resistance make it suitable for switching applications in consumer electronics, automotive systems, and industrial equipment. Additionally, it is utilized in signal switching and amplification in various electronic circuits.

Equivalent

The MMBTA64LT1G is a general-purpose NPN transistor. Equivalent products include the 2N4401, 2N3904, and BC547. These transistors can be used in similar applications, but always verify their specifications for compatibility with your circuit requirements.

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