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MMBTA14LT1G

Name: MMBTA14LT1G
Rating: 4.7 (12 reviews)

TRANS NPN DARL 30V 0.3A SOT23-3

Производитель
Мфр. Часть #MMBTA14LT1G
Пакет TO-236-3, SC-59, SOT-23-3
Лист данных MMBTA14LT1G DataSheet
В наличии9690

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Спецификации

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	NPN - Darlington
Current-Collector(Ic)(Max)	300 mA
Voltage-CollectorEmitterBreakdown(Max)	30 V
VceSaturation(Max)@IbIc	1.5V @ 100µA, 100mA
Current-CollectorCutoff(Max)	100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce	20000 @ 100mA, 5V
Power-Max	225 mW
Frequency-Transition	125MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

Обзор

Description

The MMBTA14LT1G is a type of transistor, specifically a Bipolar Junction Transistor (BJT) designed for low-power applications. It features a combination of high gain and low noise, making it suitable for audio and RF amplification. With a maximum collector current of around 1 A and a maximum collector-emitter voltage of 40 V, it can handle moderate power levels efficiently. The device is encapsulated in a compact package, which is ideal for space-constrained applications.
Due to its characteristics, the MMBTA14LT1G is commonly used in signal processing circuits, switching applications, and other scenarios where reliable performance is required. Users should refer to the manufacturer's datasheet for detailed specifications, application guidelines, and thermal management recommendations to ensure optimal performance in their specific use case.

Features

The MMBTA14LT1G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 6A.
3. On-Resistance: Offers low on-resistance (R_DS(on)) of around 0.1Ω at V_GS = 10V, which helps improve efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for effective switching at lower voltages.
5. Package Type: Housed in a compact SOT-23 package, making it suitable for space-constrained applications.
6. Fast Switching Speed: Designed for high-speed switching, enhancing performance in various applications.
7. Thermal Performance: Good thermal stability and can operate in a wide temperature range.
These features make the MMBTA14LT1G suitable for use in power management, DC-DC converters, and various low-power switching applications.

Package

The MMBTA14LT1G is packaged in a TO-92 form factor. This is a standard plastic package commonly used for transistors and small-signal devices, providing good thermal performance and ease of handling in electronic applications.

Pinout

The MMBTA14LT1G is a NPN bipolar junction transistor (BJT) packaged in a SOT-23 format. It has a total of 3 pins.
Pin Configuration:
1. Base (B) - The control terminal where input signal is applied.
2. Collector (C) - The terminal through which the output is taken; it collects the current from the emitter.
3. Emitter (E) - The terminal that emits the charge carriers; it is the output for current flowing out of the transistor.
Function: The MMBTA14LT1G is primarily used for amplification and switching applications in electronic circuits. It is suitable for low to moderate power levels, with a maximum collector current of 600 mA and a maximum collector-emitter voltage of 50 V. The transistor is commonly utilized in signal processing and various consumer electronics.

Manufacturer

The MMBTA14LT1G is manufactured by ON Semiconductor Corporation, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including analog and mixed-signal devices, power management solutions, and discrete components. The company serves various industries, such as automotive, industrial, and consumer electronics, providing innovative solutions to meet the growing demands for energy efficiency and connectivity in modern applications.

Application

The MMBTA14LT1G is a high-performance N-channel MOSFET used in various applications, including power management, switching power supplies, motor control, and audio amplifiers. Its low on-resistance and fast switching capabilities make it suitable for DC-DC converters, lighting control, and automotive applications, enhancing efficiency and reliability in electronic circuits.

Equivalent

The MMBTA14LT1G is a NPN bipolar junction transistor (BJT). Equivalent products include the MMBTA14 (without the “LT1G” suffix), BC547, 2N3904, and 2N2222. Always check the datasheets for specifications like Vce, Ic, and gain to ensure compatibility for your specific application.

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