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MMBT6429LT1G

Name: MMBT6429LT1G
Rating: 4.7 (12 reviews)

TRANS NPN 45V 0.2A SOT23-3

Производитель
Мфр. Часть #MMBT6429LT1G
Пакет
Лист данных MMBT6429LT1G DataSheet
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Спецификации

Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	200 mA
Voltage - Collector Emitter Breakdown (Max)	45 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 100µA, 5V
Power - Max	225 mW
Frequency - Transition	700MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	MMBT6429

Обзор

Description

The MMBT6429LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V, making it suitable for low to medium power applications. The transistor has a high current gain (hFE) which allows for efficient signal amplification.
Its small package size (SOT-23) enables compact designs in consumer electronics, automotive, and industrial applications. The device is commonly used in signal amplification, switching circuits, and as part of various electronic components like amplifiers and oscillators.
The MMBT6429LT1G operates efficiently in a temperature range typically from -55°C to +150°C, ensuring reliability in diverse environmental conditions. It is also RoHS-compliant, indicating that it adheres to environmental regulations concerning hazardous substances.

Features

The MMBT6429LT1G is a NPN bipolar junction transistor (BJT) designed for low-power applications. Key features include:
1. Type: NPN transistor.
2. Package: SOT-23, which is compact and suitable for surface mount applications.
3. Maximum Collector-Emitter Voltage (Vce): 50V, allowing for use in various circuits.
4. Maximum Collector Current (Ic): 600 mA, providing sufficient drive capability for many applications.
5. DC Current Gain (hFE): Ranges from 100 to 300 at a specific collector current, enhancing amplification performance.
6. Transition Frequency (fT): Approximately 100 MHz, indicating suitability for high-frequency applications.
7. Operating Temperature: -55°C to 150°C, ensuring reliability in diverse environments.
8. Applications: Commonly used in switching, amplification, and signal processing applications in consumer electronics, automotive, and industrial sectors.
These features make the MMBT6429LT1G a versatile component for various electronic designs.

Package

The MMBT6429LT1G is packaged in a SOT-23 surface mount format. This compact package is designed for space-efficient applications in electronic circuits.

Pinout

The MMBT6429LT1G is a NPN bipolar junction transistor (BJT) housed in a SOT-23 package. It has a total of 3 pins.
### Pin Configuration:
1. Base (B): This is the control terminal of the transistor. It regulates the flow of current between the collector and emitter.
2. Collector (C): The terminal through which the main current flows into the transistor. It is typically connected to the power supply.
3. Emitter (E): The terminal that allows current to flow out of the transistor. It is usually connected to ground or the lower potential in the circuit.
### Function:
The MMBT6429LT1G is designed for amplification and switching applications in electronic circuits. It can handle small to medium current and voltage levels, making it suitable for various low-power applications in signal processing and control systems.

Manufacturer

The MMBT6429LT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including integrated circuits, power management solutions, and sensors. The company provides products that serve various applications, including automotive, industrial, communications, consumer electronics, and computing. Founded in 1999, ON Semiconductor focuses on energy-efficient technologies and solutions, catering to a diverse customer base and contributing to advancements in electronics and power management.

Application

The MMBT6429LT1G is a NPN bipolar junction transistor primarily used in low-power switching and amplification applications. Its application areas include signal processing in audio devices, driving LEDs, and in general-purpose low-frequency amplification circuits. It is also suitable for use in consumer electronics, telecommunications, and automotive systems where compact size and efficiency are essential.

Equivalent

The MMBT6429LT1G is a NPN transistor. Equivalent products include the 2N4401, 2N3904, and BC547. Ensure you check specifications like current rating, voltage rating, and package type for compatibility. Always refer to datasheets for detailed comparisons.

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