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MMBT6428LT1G

Name: MMBT6428LT1G
Rating: 4.7 (12 reviews)

TRANS NPN 50V 0.2A SOT23-3

Производитель
Мфр. Часть #MMBT6428LT1G
Пакет
Лист данных MMBT6428LT1G DataSheet
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Спецификации

Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	200 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 100µA, 5V
Power - Max	225 mW
Frequency - Transition	700MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	MMBT6428

Обзор

Description

The MMBT6428LT1G is a bipolar junction transistor (BJT) designed for low-power applications. It is typically used in switching and amplification tasks in electronic circuits. This NPN transistor features a maximum collector current of 600 mA and a collector-emitter voltage of 60 V. With its small SOT-23 package, it is suitable for space-constrained designs.
The MMBT6428LT1G has a low base-emitter saturation voltage, which enhances its efficiency and performance in various applications, including signal amplification, digital circuits, and power management systems. It operates across a wide temperature range, making it versatile for different environments.
Key specifications include a current gain (hFE) typically around 100 to 300, enabling effective signal amplification. Its characteristics make it ideal for consumer electronics, automotive applications, and other fields requiring reliable, compact components. Always consult the datasheet for detailed electrical characteristics and application guidelines.

Features

The MMBT6428LT1G is a NPN bipolar junction transistor (BJT) designed for switching and amplifier applications. Key features include:
1. Voltage Rating: Collector-Emitter Voltage (Vce) is up to 60V, making it suitable for various applications.
2. Current Rating: Maximum Collector Current (Ic) of 600mA, allowing it to handle moderate loads.
3. Power Dissipation: Rated at 500mW, providing adequate heat management for typical use cases.
4. Gain (hFE): Offers a current gain range of 100 to 300, enhancing signal amplification.
5. Package: Available in a SOT-23 surface-mount package, promoting space-saving designs.
6. Switching Speed: Fast switching capabilities, making it suitable for high-speed applications.
7. Temperature Range: Operates within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
These features make the MMBT6428LT1G versatile for both consumer electronics and industrial applications.

Package

The MMBT6428LT1G is packaged in a SOT-23 (Small Outline Transistor) package, which is a compact, surface-mount package suitable for space-constrained applications.

Pinout

The MMBT6428LT1G is a complementary NPN/PNP transistor pair in a small SOT-23 package. It features three pins:
1. Pin 1 (Base of NPN) - This pin is used to control the NPN transistor.
2. Pin 2 (Emitter of PNP) - This pin serves as the emitter for the PNP transistor.
3. Pin 3 (Collector of PNP / Emitter of NPN) - This pin is connected to the collector of the PNP transistor and the emitter of the NPN transistor.
The MMBT6428LT1G is commonly used in low-power switching and amplification applications.

Manufacturer

The MMBT6428LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components and solutions, including power management, analog, logic, discrete, and imaging devices. The company serves various industries such as automotive, industrial, computing, consumer electronics, and telecommunications. With a focus on energy-efficient solutions, ON Semiconductor aims to provide innovative technologies to enable a more sustainable and connected world.

Application

The MMBT6428LT1G is a NPN bipolar junction transistor (BJT) commonly used in low-power switching and amplification applications. It is suitable for signal amplification in audio devices, RF applications, and general-purpose switching in consumer electronics. Additionally, it can be utilized in driver circuits for LEDs and transistors in relay control, as well as in various digital and analog signal processing applications.

Equivalent

The MMBT6428LT1G is a NPN transistor commonly used in low-power applications. Equivalent products include the BC547, 2N3904, and 2N2222, which provide similar performance characteristics. For more precise applications, consider the MMBT6428 or other similar transistors within the same series, ensuring to verify specifications such as voltage, current rating, and gain. Always check the datasheets for compatibility in specific use cases.

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