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MMBT2907AWT1G

Name: MMBT2907AWT1G
Rating: 4.7 (12 reviews)

TRANS PNP 60V 0.6A SC70-3

Производитель
Мфр. Часть #MMBT2907AWT1G
Пакет SC-70, SOT-323
Лист данных MMBT2907AWT1G DataSheet
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Спецификации

Supplier	onsemi,Rochester Electronics, LLC
Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
TransistorType	PNP
Current-Collector(Ic)(Max)	600 mA
Voltage-CollectorEmitterBreakdown(Max)	60 V
VceSaturation(Max)@IbIc	1.6V @ 50mA, 500mA
DCCurrentGain(hFE)(Min)@IcVce	100 @ 150mA, 10V
Power-Max	150 mW
Frequency-Transition	200MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	SC-70, SOT-323

Обзор

Description

MMBT2907AWT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-power switching applications. It is commonly used in electronic circuits for amplification and switching purposes. The device typically features low on-resistance, fast switching speeds, and high input impedance, making it suitable for a variety of applications, including power management and signal processing.
Key specifications often include a maximum drain-source voltage (V_DS), a maximum continuous drain current (I_D), and a specified gate threshold voltage (V_GS(th)). The “AWT1G” suffix indicates specific packaging and lead configurations, often in a surface-mount package for ease of integration into modern circuit designs.
When using MMBT2907AWT1G, it's important to consider thermal management and ensure that it operates within its rated parameters to avoid damage. It is widely available and supported by various manufacturers, making it a popular choice in electronic design projects.

Features

The MMBT2907AWT1G is a PNP bipolar junction transistor (BJT) designed for low-power switching and amplification applications. Key features include:
1. Type: PNP
2. Voltage Rating: Collector-Emitter Voltage (Vce) of up to -60V, suitable for various applications.
3. Current Rating: Maximum collector current (Ic) of -600mA, allowing for efficient switching capabilities.
4. Power Dissipation: Maximum power dissipation of 500mW, facilitating reliable operation in various conditions.
5. Gain: High current gain (hFE) ranging from 100 to 600, enhancing performance in amplification applications.
6. Package: Available in a SOT-23 surface-mount package, offering compactness and ease of integration onto PCBs.
7. Temperature Range: Operating temperature range from -55°C to +150°C, ensuring stability across a wide range of environments.
This transistor is commonly used in consumer electronics, automotive applications, and other electronic circuits where efficient performance is required.

Package

The MMBT2907AWT1G is packaged in a SOT-23 (Small Outline Transistor) format. This compact surface-mount package is commonly used for low-power transistors in various electronic applications.

Pinout

The MMBT2907AWT1G is a NPN bipolar junction transistor (BJT) in a surface-mount SOT-23 package. It has a pin count of 3. The functions of the pins are as follows:
1. Base (B): This is the control pin that modulates the transistor's conductivity. It is used to turn the transistor on or off by applying a small current.

2. Collector (C): This pin connects to the higher voltage supply and is where the main current flows out of the transistor when it is in the on state.
3. Emitter (E): This pin is connected to ground or the lower voltage side of the circuit. It serves as the exit path for the current flowing through the transistor.
The MMBT2907AWT1G is commonly used for switching and amplification applications in various electronic circuits.

Manufacturer

The MMBT2907AWT1G is manufactured by ON Semiconductor, a company specializing in semiconductor solutions. ON Semiconductor is a global provider of a wide range of components, including diodes, transistors, analog ICs, and power management solutions. Founded in 1999, the company focuses on energy-efficient devices, catering to various sectors such as automotive, industrial, and consumer electronics. They emphasize innovation and sustainability in their product offerings, supporting the growing demand for advanced technologies in a wide array of applications.

Application

The MMBT2907AWT1G is a PNP bipolar junction transistor used in various applications, including amplification, switching, and signal processing in electronic circuits. It is commonly found in consumer electronics, automotive systems, and industrial equipment. Its versatility allows it to be utilized in low-power and medium-power applications, such as audio amplifiers, linear regulators, and general-purpose switching tasks.

Equivalent

The MMBT2907AWT1G is a PNP bipolar junction transistor (BJT). Equivalent products include:
1. BC558
2. 2N2907
3. MMBT2907A
Ensure to verify the specifications such as voltage, current ratings, and package type for compatibility in your specific application.

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