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MMBFJ202

Name: MMBFJ202
Rating: 4.7 (12 reviews)

SMALL SIGNAL FIELD-EFFECT TRANSI

Производитель
Мфр. Часть #MMBFJ202
Пакет TO-236-3, SC-59, SOT-23-3
Лист данных MMBFJ202 DataSheet
В наличии2041

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100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

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Спецификации

Supplier	Rochester Electronics, LLC
Package	Bulk
ProductStatus	Active
FETType	N-Channel
Voltage-Breakdown(V(BR)GSS)	40 V
Current-Drain(Idss)@Vds(Vgs=0)	900 µA @ 20 V
Voltage-Cutoff(VGSoff)@Id	800 mV @ 10 nA
Power-Max	350 mW
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

Обзор

Description

MMBFJ202 is an introductory course designed to provide students with foundational knowledge and skills in the field of financial journalism. The course covers essential topics such as financial reporting, market analysis, and the role of media in shaping public understanding of economic issues. Students will learn to research, write, and present financial news effectively, emphasizing accuracy and clarity.
The curriculum includes practical assignments, case studies, and guest lectures from industry professionals, offering insights into current trends and best practices in financial journalism. By the end of the course, students will be equipped to critically analyze financial information, understand the implications of economic events, and produce compelling stories for various media platforms. This course is ideal for those interested in pursuing a career in journalism, finance, or communications.

Features

The MMBFJ202 is a high-frequency, low-noise N-channel MOSFET designed for various RF applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage of around 30V.
2. Low Gate Threshold Voltage: This allows for efficient operation at lower voltages.
3. High Gain: Offers a high transconductance, which enhances amplification performance.
4. Low Noise Figure: Optimized for low noise, making it suitable for RF amplification.
5. Small Package Size: Usually available in compact packages (such as SOT-23), facilitating easy integration into designs with limited space.
6. Wide Frequency Range: Effective in applications from DC to several GHz, making it versatile for various RF and microwave circuits.
7. Thermal Stability: Designed to handle a range of temperatures, ensuring reliable operation in different environments.
These features make the MMBFJ202 ideal for use in RF amplifiers, mixers, and other signal processing applications.

Package

The MMBFJ202 is typically packaged in a surface mount package format, specifically the SOT-23 package. This compact package design is commonly used for discrete semiconductor devices, allowing for efficient space utilization on printed circuit boards.

Pinout

The MMBFJ202 is a dual N-channel MOSFET in a SOT-23 package. It features a total of 6 pins.
Pin Count and Functions:
1. Pin 1 (D) - Drain of the first MOSFET (M1)
2. Pin 2 (G) - Gate of the first MOSFET (M1)
3. Pin 3 (S) - Source of the first MOSFET (M1)
4. Pin 4 (G) - Gate of the second MOSFET (M2)
5. Pin 5 (S) - Source of the second MOSFET (M2)
6. Pin 6 (D) - Drain of the second MOSFET (M2)
The MMBFJ202 is commonly used for low-power switching and amplification applications, providing efficient performance with low on-resistance and high speed.

Manufacturer

The MMBFJ202 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the design, development, and production of discrete semiconductor devices, logic devices, and MOSFETs, among other products. The company focuses on high-volume production of components used in various applications, including automotive, consumer electronics, and industrial sectors. Nexperia is known for its commitment to quality, reliability, and efficiency in semiconductor manufacturing.

Application

The MMBFJ202 is commonly used in low-power applications, including switching and amplifying signals in radio frequency (RF) devices, audio equipment, and telecommunication systems. Its compact size and efficiency make it suitable for portable electronics, such as mobile phones and battery-operated devices. Additionally, it is utilized in sensor interfaces and signal processing circuits in various consumer electronics and automation systems.

Equivalent

The MMBFJ202 is a dual N-channel MOSFET. Equivalent products include the 2N7000, BS170, and J176. Other alternatives may vary based on specific applications, so always check the datasheets for parameters like voltage, current ratings, and switching speeds to ensure compatibility.

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Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.