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MMBD6100LT1G

Name: MMBD6100LT1G
Rating: 4.7 (12 reviews)

DIODE ARRAY GP 70V 200MA SOT23-3

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Мфр. Часть #MMBD6100LT1G
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Спецификации

Part Status	Active
Diode Configuration	1 Pair Common Cathode
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	70 V
Current - Average Rectified (Io) (per Diode)	200mA (DC)
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 100 mA
Speed	Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)	4 ns
Current - Reverse Leakage @ Vr	100 nA @ 50 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	MMBD6100

Обзор

Description

The MMBD6100LT1G is a dual general-purpose NPN/PNP transistor designed for a variety of low-power switching and amplifier applications. It is part of the SOT-363 package and features a compact footprint, making it suitable for space-constrained designs in consumer electronics, automotive, and industrial applications. The device offers high-speed switching capabilities, low saturation voltage, and efficient thermal performance.
Key specifications include a maximum collector current of 600 mA, a maximum collector-emitter voltage of 30 V, and a DC current gain (hFE) that ranges from 100 to 300, depending on the specific operating conditions. The MMBD6100LT1G is ideal for driving small loads, signal amplification, and as a switch in various electronic circuits. Its versatility and reliability make it a popular choice among engineers and designers for numerous applications.

Features

The MMBD6100LT1G is a high-speed dual switching diode in a compact SOT-23 package. Key features include:
1. Dual Diode Configuration: Contains two diodes in a single package, ideal for space-constrained applications.
2. Low Forward Voltage Drop: Ensures efficient performance with reduced power loss.
3. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall circuit performance.
4. Reverse Voltage Rating: Typically rated for 45V, allowing for use in various voltage applications.
5. Forward Current Rating: Supports a maximum forward current of 200mA per diode, offering flexibility in load management.
6. Environmental Rating: RoHS compliant, ensuring it meets environmental standards for reduced hazardous substances.
7. Wide Temperature Range: Operational temperature range from -55°C to +150°C, making it suitable for diverse environments.
These features make the MMBD6100LT1G ideal for signal switching, clamping, and rectification applications in consumer electronics, automotive, and industrial sectors.

Package

The MMBD6100LT1G is packaged in a SOT-23 (Small Outline Transistor) package type. This package is commonly used for surface-mount devices due to its compact size and efficient thermal and electrical performance.

Pinout

The MMBD6100LT1G is a dual general-purpose Schottky barrier diode in a SOT-23 package, which typically has a pin count of 3. The functions of the pins are as follows:
1. Pin 1 (Anode of Diode 1) - This is the anode terminal for the first Schottky diode.
2. Pin 2 (Cathode of Diode 1 / Anode of Diode 2) - This pin serves as the common cathode for the first diode and the anode for the second diode.
3. Pin 3 (Cathode of Diode 2) - This is the cathode terminal for the second Schottky diode.
The MMBD6100LT1G is designed for high-speed switching applications and offers low forward voltage drop, making it suitable for various electronic applications such as signal detection and rectification.

Manufacturer

The MMBD6100LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including analog, digital, and mixed-signal semiconductors. The company serves various industries such as automotive, communications, computing, consumer electronics, and industrial applications. With a strong focus on energy efficiency and sustainability, ON Semiconductor develops innovative solutions that address the needs of modern electronic devices and systems.

Application

The MMBD6100LT1G is a general-purpose NPN transistor primarily used in low-power switching and amplification applications. Common areas include signal processing, audio amplification, and low-frequency switching circuits. It can also be utilized in small-signal applications, such as in signal modulation and demodulation in communication devices.

Equivalent

The MMBD6100LT1G is a dual general-purpose Schottky barrier rectifier diode. Equivalent products include the MMBT3904 (for switching applications), 1N5817 (for rectification), and BAT54 (for low-voltage applications). However, ensure to check specific electrical characteristics like reverse voltage and forward current ratings to confirm suitability for your application.

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