Изображения являются только для ссылки

MJD45H11T4G

Name: MJD45H11T4G
Rating: 4.7 (12 reviews)

TRANS PNP 80V 8A DPAK

Производитель
Мфр. Часть #MJD45H11T4G
Пакет DPAK-3
Лист данных
В наличии5241

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	PNP
Current-Collector(Ic)(Max)	8 A
Voltage-CollectorEmitterBreakdown(Max)	80 V
VceSaturation(Max)@IbIc	1V @ 400mA, 8A
Current-CollectorCutoff(Max)	1µA
DCCurrentGain(hFE)(Min)@IcVce	40 @ 4A, 1V
Power-Max	1.75 W
Frequency-Transition	90MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Обзор

Description

The MJD45H11T4G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance, which minimizes power loss and enhances efficiency in various electronic circuits. The device is commonly used in power management, motor control, and other applications requiring efficient switching.
Key specifications include a maximum drain-source voltage (V_DS) of 45V, a continuous drain current (I_D) rating of up to 45A, and a low gate threshold voltage. Its compact surface-mount package (TO-220) allows for easy integration into circuits while providing good thermal performance.
Overall, the MJD45H11T4G is suitable for both consumer and industrial electronics, providing reliable performance in applications such as DC-DC converters, automotive systems, and power supplies.

Features

The MJD45H11T4G is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 45V.
2. Current Rating: The continuous drain current (I_D) is around 60A, making it suitable for high-current applications.
3. R_DS(on): It offers low on-state resistance, typically around 18 mΩ, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Package Type: It is available in a TO-220 package, providing good thermal management and ease of heatsinking.
6. Fast Switching Speed: The device supports fast switching, ideal for applications like power converters, motor drives, and inverters.
These features make the MJD45H11T4G suitable for various electronic applications requiring efficient power management.

Package

The MJD45H11T4G is a power transistor packaged in a TO-220 format. This package type is designed for efficient heat dissipation and robust performance in high-power applications.

Pinout

The MJD45H11T4G is a N-channel MOSFET transistor featuring a total of 3 pins. These pins have the following functions:
1. Gate (G): The control terminal that regulates the conduction state of the MOSFET. A voltage applied to the gate determines whether the device is on or off.
2. Drain (D): The terminal through which the current flows out of the device when it is turned on. This is where the load is connected.
3. Source (S): The terminal through which the current enters the device. In common usage, this is typically connected to ground or the lower potential in a circuit.
The MJD45H11T4G is commonly used in power management and switching applications due to its high efficiency and low on-resistance characteristics.

Manufacturer

The MJD45H11T4G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of electronic components, including power management and analog solutions, as well as sensors, custom devices, and integrated circuits. The company serves various industries such as automotive, industrial, telecommunications, consumer electronics, and computing. With a focus on energy efficiency and innovation, ON Semiconductor aims to provide sustainable solutions for modern electronic applications.

Application

The MJD45H11T4G is a high-voltage NPN power transistor commonly used in applications such as motor control, power switching, and amplifiers. Its high current handling capability makes it suitable for use in power supplies, converters, and inverters in industrial and automotive settings. Additionally, it can be employed in audio amplification and high-frequency signal processing.

Equivalent

The MJD45H11T4G is a NPN power transistor. Equivalent products include the MJD45H11, BD139, TIP31, and TIP41. Always check specific datasheets for voltage, current ratings, and package compatibility to ensure they meet your application requirements.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.