Изображения являются только для ссылки

MJD44H11-1G

Name: MJD44H11-1G
Rating: 4.7 (12 reviews)

TRANS NPN 80V 8A IPAK

Производитель
Мфр. Часть #MJD44H11-1G
Пакет DPAK INSERTION MOUNT
Лист данных
В наличии2517

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Bulk,Tube
ProductStatus	Active
TransistorType	NPN
Current-Collector(Ic)(Max)	8 A
Voltage-CollectorEmitterBreakdown(Max)	80 V
VceSaturation(Max)@IbIc	1V @ 400mA, 8A
Current-CollectorCutoff(Max)	1µA
DCCurrentGain(hFE)(Min)@IcVce	40 @ 4A, 1V
Power-Max	1.75 W
Frequency-Transition	85MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
Package/Case	TO-251-3 Short Leads, IPak, TO-251AA

Обзор

Description

MJD44H11-1G is a high-voltage N-channel MOSFET designed for various applications, including power management and switching. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 44A, making it suitable for demanding environments. The device is characterized by low on-resistance (R_DS(on)), which minimizes power losses during operation, enhancing efficiency.
This MOSFET is typically housed in a TO-220 package, facilitating effective heat dissipation and easy mounting on heatsinks. Its fast switching capabilities help improve performance in applications such as DC-DC converters, motor control, and automotive systems.
The MJD44H11-1G is known for its reliability and robustness, making it a popular choice among engineers for designing energy-efficient circuits. Overall, it provides excellent performance in high-frequency applications while maintaining thermal stability.

Features

The MJD44H11-1G is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 44A, which allows it to support high-power applications.
3. Low On-Resistance: Features a low R_DS(on), typically around 0.025 ohms, which improves efficiency by reducing power loss during operation.
4. Fast Switching Speed: Suitable for high-frequency applications due to its quick turn-on and turn-off times.
5. Thermal Performance: It has a robust thermal resistance, allowing it to dissipate heat effectively, enhancing reliability in demanding environments.
6. Package: Available in DPAK or TO-220 packages, facilitating easy mounting and thermal management.
These characteristics make the MJD44H11-1G ideal for use in power supplies, motor drivers, and other switching applications.

Package

The MJD44H11-1G is packaged in a TO-220 form factor, which is a standard package type used for power transistors. This package provides good thermal performance and ease of mounting on heat sinks.

Pinout

The MJD44H11-1G is a N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to this pin allows the device to turn on and conduct current.
2. Drain (D) - This pin is where the load is connected. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S) - This pin is connected to ground or a lower potential compared to the drain. It serves as the return path for the current flowing through the device.
4. Body (B) - This is the internal body diode, which typically connects the source to the substrate. It is not explicitly used as a separate pin but is considered in the device operation.
The MJD44H11-1G is commonly used in power switching applications due to its efficiency and high current handling capability.

Manufacturer

The MJD44H11-1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor designs and produces a wide range of products, including analog, digital, and mixed-signal integrated circuits, as well as discrete components. The company serves various sectors, including automotive, industrial, communications, and consumer electronics. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient technology and sustainable practices, making it a key player in the semiconductor industry.

Application

The MJD44H11-1G is an NPN power transistor primarily used in switching applications and amplification circuits. Its key application areas include motor control, power supplies, lighting control, and audio amplifiers. It is suitable for high-current and high-voltage operations, commonly found in industrial equipment, consumer electronics, and automotive systems.

Equivalent

The MJD44H11-1G is a power transistor, specifically an NPN transistor, typically used in switching applications. Equivalent products include:
1. MJE2955
2. 2N3055
3. TIP31
4. BD139
Always verify specifications like voltage, current, and package type to ensure compatibility in your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.