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MJD2955T4G

Name: MJD2955T4G
Rating: 4.7 (12 reviews)

TRANS PNP 60V 10A DPAK

Производитель
Мфр. Часть #MJD2955T4G
Пакет TO-252-3, DPak (2 Leads + Tab), SC-63
Лист данных MJD2955T4G DataSheet
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Спецификации

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	PNP
Current-Collector(Ic)(Max)	10 A
Voltage-CollectorEmitterBreakdown(Max)	60 V
VceSaturation(Max)@IbIc	8V @ 3.3A, 10A
Current-CollectorCutoff(Max)	50µA
DCCurrentGain(hFE)(Min)@IcVce	20 @ 4A, 4V
Power-Max	1.75 W
Frequency-Transition	2MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Обзор

Description

MJD2955T4G is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. Known for its high voltage and current handling capabilities, it typically operates with a maximum drain-source voltage of -20V and a continuous drain current of -15A.
The device is characterized by a low on-resistance (RDS(on)), which enhances its efficiency in power applications. It is commonly found in circuits for switching and amplification, making it suitable for use in power management, motor control, and audio applications.
The MJD2955T4G package typically comes in a TO-220 or similar format, allowing for effective thermal management. Its P-channel configuration allows it to be used in high-side switching applications, where the load is connected to the supply voltage.
Overall, the MJD2955T4G is valued for its reliability, robustness, and ease of integration into various electronic systems.

Features

The MJD2955T4G is a P-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of -55V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to -15A, providing robust performance in power circuits.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.1 ohms, which minimizes power loss and increases efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from -1V to -3V, allowing for easier control in switching applications.
5. Package: The MOSFET is typically available in a TO-220 package, facilitating heat dissipation and integration into various PCB designs.
6. Applications: Commonly used in power management, switching regulators, and motor control circuits.
These features make the MJD2955T4G a versatile choice for engineers working on power electronics.

Package

The MJD2955T4G is packaged in a TO-220 type package, which is a metal tabbed package designed for power applications, allowing effective heat dissipation.

Pinout

The MJD2955T4G is a PNP power transistor commonly used for general-purpose switching and amplification applications. It typically comes in a TO-220 package, which has three pins.
Pin Count and Functions:
1. Collector (C) - This pin is used to connect to the load and is where the main current flows through the transistor.
2. Base (B) - This pin is used to control the transistor's operation. A small current applied to the base allows a larger current to flow from collector to emitter.
3. Emitter (E) - This pin is connected to the ground or negative supply in PNP configurations. It serves as the output through which current exits the transistor.
The MJD2955T4G is designed for high-speed switching and can handle significant power, making it suitable for various applications in power management and audio amplification.

Manufacturer

The MJD2955T4G is manufactured by ON Semiconductor, a company known for its semiconductor solutions. ON Semiconductor specializes in various electronic components, including power and signal management, analog, logic, timing, connectivity, and custom devices. The company serves a wide range of industries, such as automotive, industrial, and consumer electronics, providing innovative technologies for energy efficiency and connectivity. With a global presence, ON Semiconductor focuses on delivering high-performance solutions to meet the evolving needs of its customers.

Application

The MJD2955T4G is a P-channel power MOSFET commonly used in applications such as switching regulators, motor drivers, power management systems, and audio amplifiers. Its low on-resistance and high current handling capabilities make it suitable for automotive, industrial, and consumer electronics applications, where efficient power control and thermal performance are critical.

Equivalent

The MJD2955T4G is a PNP power transistor commonly used for switching and amplification. Equivalent products include the MJE2955, TIP2955, and 2N3055. Always verify specifications and ratings to ensure compatibility for your specific application.

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