Изображения являются только для ссылки

MGSF1N02LT1G

Name: MGSF1N02LT1G
Rating: 4.7 (12 reviews)

MOSFET N-CH 20V 750MA SOT23-3

Производитель
Мфр. Часть #MGSF1N02LT1G
Пакет
Лист данных MGSF1N02LT1G DataSheet
В наличии17778

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Supplier	onsemi,Rochester Electronics, LLC
Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	20 V
Current-ContinuousDrain(Id)@25°C	750mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	90mOhm @ 1.2A, 10V
Vgs(th)(Max)@Id	2.4V @ 250µA
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	125 pF @ 5 V
PowerDissipation(Max)	400mW (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3 (TO-236)

Обзор

Description

MGSF1N02LT1G refers to a specific course or subject code, likely in the context of a graduate or postgraduate program, potentially focusing on finance, management, or a related field. Typically, such courses cover foundational concepts, theories, and methodologies relevant to the subject matter.
If this is part of a finance curriculum, for example, the course might delve into financial management, investment analysis, or corporate finance. It may include lectures, case studies, and practical applications to help students develop analytical skills and understand real-world financial scenarios.
To get detailed information about the course's content, objectives, prerequisites, and assessment methods, it's best to consult the course syllabus or the academic institution offering it.

Features

The MGSF1N02LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. Key features include:
- Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 20V.
- Current Rating: The maximum continuous drain current (I_D) can reach approximately 1.5A, making it suitable for various low to moderate power applications.
- R_DS(on): It has a low on-resistance (R_DS(on)), typically around 0.1 ohms, which minimizes power loss and improves efficiency.
- Gate Threshold Voltage: The gate-to-source threshold voltage (V_GS(th)) is between 1V to 3V, allowing for easy drive with lower voltage levels.
- Package Type: It is available in a SOT-23 package, which is compact and suitable for space-constrained designs.
This MOSFET is commonly used in switching applications, power management, and other electronic circuits where efficient control of electrical power is necessary.

Package

The MGSF1N02LT1G is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The MGSF1N02LT1G is a N-channel MOSFET designed for general-purpose applications. It typically comes in a TO-220 package with a pin count of three. The pin functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is the output where current flows out when the MOSFET is in the "on" state.
3. Source (S) - This pin is the input where current enters when the MOSFET is activated.
The device is designed to handle high voltages and currents, making it suitable for various applications including power management and switching.

Manufacturer

The MGSF1N02LT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor solutions. ON Semiconductor specializes in designing and producing a wide range of semiconductor products, including power management, analog, and discrete devices. The company caters to various industries such as automotive, communications, computing, consumer electronics, and industrial applications. ON Semiconductor is recognized for its focus on energy-efficient products and technologies, aiming to provide innovative solutions that enhance performance while minimizing environmental impact.

Application

The MGSF1N02LT1G is a MOSFET (metal-oxide-semiconductor field-effect transistor) used in various applications, including power management in DC-DC converters, motor control circuits, and switch-mode power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power electronics in consumer electronics, automotive systems, and industrial automation.

Equivalent

The MGSF1N02LT1G is a N-channel MOSFET. Equivalent products include the BSS123, IRF520, and BS170, depending on the application requirements such as voltage, current ratings, and package type. Always verify the specific electrical characteristics and ratings to ensure compatibility for your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.