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MBR2H200SFT3G

Name: MBR2H200SFT3G
Rating: 4.7 (12 reviews)

DIODE SCHOTTKY 200V 2A SOD123FL

Производитель
Мфр. Часть #MBR2H200SFT3G
Пакет SOD-123FL
Лист данных
В наличии2097

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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
DiodeType	Schottky
Voltage-DCReverse(Vr)(Max)	200 V
Current-AverageRectified(Io)	2A
Voltage-Forward(Vf)(Max)@If	940 mV @ 2 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current-ReverseLeakage@Vr	200 µA @ 200 V
MountingType	Surface Mount
Package/Case	SOD-123F
SupplierDevicePackage	SOD-123FL

Обзор

Description

The MBR2H200SFT3G is a Schottky diode from ON Semiconductor, specifically designed for high-efficiency applications. It features a low forward voltage drop and fast switching capabilities, making it suitable for power management and rectification in various electronic devices. With a maximum repetitive reverse voltage of 20V and a forward current rating of 2A, this diode excels in minimizing energy loss and improving overall system efficiency.
Key characteristics include a low reverse leakage current and a compact surface-mount package (SFT3G), which allows for easy integration into space-constrained designs. Common applications include DC-DC converters, power supplies, and battery management systems. The MBR2H200SFT3G’s reliability and performance make it a preferred choice for engineers looking to enhance their circuit designs.

Features

The MBR2H200SFT3G is a dual N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 200A, depending on conditions, allowing for high power applications.
3. Low On-Resistance: It boasts a low R_DS(on) of approximately 2.5 mΩ, contributing to reduced conduction losses and improved efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications like DC-DC converters and power management systems.
5. Package Type: It comes in a DPAK package, providing good thermal performance and ease of mounting.
6. Thermal Resistance: It features low thermal resistance, facilitating better heat dissipation.
Overall, the MBR2H200SFT3G is well-suited for power management and switching applications in various electronic devices.

Package

The MBR2H200SFT3G is packaged in a surface-mount type, specifically a SOT-23 package. This compact design is suitable for various applications, including power management and voltage regulation.

Pinout

The MBR2H200SFT3G is a Schottky barrier rectifier. It comes in a standard SOT-23 package with a total of three pins.
Pin configuration and functions:
1. Anode (A) - This is the pin where the current enters the diode.
2. Cathode (K) - This pin is connected to the output side where the current exits the diode. It typically has a higher potential than the anode.
3. Common/Unused Pin (NC) - This pin is not connected to any function and is often used for mechanical stability or as a placeholder.
The MBR2H200SFT3G is designed for applications requiring efficient rectification with low forward voltage drop and fast switching times, making it suitable for power supply circuits, DC-DC converters, and other electronic applications.

Manufacturer

The MBR2H200SFT3G is manufactured by ON Semiconductor, a global company specializing in semiconductor solutions. ON Semiconductor designs and produces a wide range of products, including power management, analog, and mixed-signal devices, as well as discrete components like diodes, transistors, and sensors. The company is focused on providing energy-efficient solutions and has a strong presence in various markets such as automotive, industrial, and consumer electronics. Founded in 1999, ON Semiconductor has grown through strategic acquisitions and continues to innovate in the semiconductor industry.

Application

The MBR2H200SFT3G is a Schottky barrier rectifier designed for applications including power supply circuits, DC-DC converters, and battery charging systems. Its low forward voltage drop and fast switching capabilities make it suitable for use in power management and energy-efficient designs. Commonly used in consumer electronics, automotive applications, and renewable energy systems, it helps improve overall efficiency and thermal performance.

Equivalent

The MBR2H200SFT3G is a Schottky barrier rectifier. Equivalent products include the STPS2H200, 1N5820, and SB200. Always verify specifications, such as voltage, current rating, and package type, when selecting equivalents.

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УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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