M29W800DB45N6E

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M29W800DB45N6E

IC FLASH 8MBIT PARALLEL 48TSOP

  • Производитель
  • Мфр. Часть #M29W800DB45N6E
  • Пакет 48-TSOP I
  • Лист данных
  • В наличии2526

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Спецификации

Package Tray
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 8Mb (1M x 8, 512K x 16)
MemoryInterface Parallel
WriteCycleTime-WordPage 45ns
AccessTime 45 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 48-TFSOP (0.724, 18.40mm Width)

Обзор

Description

The M29W800DB45N6E is an 8 Mbit (1 Megabyte) Flash memory chip produced by STMicroelectronics. It utilizes a 5V single supply voltage and is designed to provide high-speed read and write operations, making it suitable for a variety of applications, including embedded systems, consumer electronics, and automotive devices.
This memory chip features a parallel interface, allowing for fast data transfer rates and efficient programming capabilities. It supports multiple programming modes, including byte and word programming and offers a memory endurance of approximately 100,000 write/erase cycles. The M29W800DB45N6E also includes a hierarchical organization of memory blocks, facilitating efficient data management and sector-based erasing.
Its compact package sizes and low power consumption make it ideal for applications requiring reliable non-volatile storage. Overall, the M29W800DB45N6E combines performance, versatility, and reliability, catering to various electronic design needs.

Features

The M29W800DB45N6E is an 8 Mbit (1 Mbyte) Flash memory device from STMicroelectronics. Key features include:
1. Density: 8 Mbit (1 Mbyte) capacity.
2. Interface: Parallel interface for easy integration.
3. Organization: Available in various configurations such as 8 bits or 16 bits wide.
4. Access Time: Fast access time, typically around 45 ns.
5. Voltage Range: Operates at 2.7V to 3.6V, suitable for low-power applications.
6. Endurance: Supports a high number of write/erase cycles (up to 100,000 cycles).
7. Data Retention: Retains data for over 20 years.
8. Programming: Supports byte-write and sector erase modes.
9. Package Options: Available in various packages, typically a 44-lead TSOP or a 40-lead PDIP.
These features make the M29W800DB45N6E suitable for a range of applications, including consumer electronics, automotive, and industrial sectors where reliable non-volatile memory is essential.

Package

The M29W800DB45N6E is packaged in a TSOP (Thin Small Outline Package) type, specifically the 32-pin TSOP package. This package design is compact and suitable for surface-mount applications.

Manufacturer

The M29W800DB45N6E is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including microcontrollers, memory devices, and analog components. The company serves various industries such as automotive, industrial, consumer electronics, and telecommunications. With a strong focus on innovation and sustainability, STMicroelectronics aims to provide high-performance solutions that drive the growth of electronic applications worldwide.

Application

The M29W800DB45N6E is a 1 Megabit (8 Mb) Flash memory chip primarily used in embedded systems, consumer electronics, automotive applications, telecommunications, and industrial devices. Its applications include firmware storage, data logging, code execution, and configuration storage in devices such as routers, modems, and programmable logic controllers (PLCs). The chip supports fast read and write operations, making it suitable for applications requiring quick data access and updates.

Equivalent

The M29W800DB45N6E is an 8Mb (1MB) flash memory chip. Equivalent products include the AM29F800BB, AT45DB801D, and the W29C800D. Ensure to verify compatibility in terms of voltage, pin configuration, and programming methods when replacing.

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