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LMBR130FT1G

Name: LMBR130FT1G
Rating: 4.7 (12 reviews)

Производитель
Мфр. Часть #LMBR130FT1G
Пакет
Лист данных LMBR130FT1G DataSheet
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Спецификации

Manufacturer	LRC
Package	SOD-123FL
Current - Rectified	1A
Voltage - Forward(Vf@If)	500mV
Voltage - DC Reverse(Vr)	30V

Обзор

Description

The LMBR130FT1G is a Schottky barrier rectifier designed for applications requiring high efficiency and fast switching speeds. It features a low forward voltage drop, making it ideal for use in power management and rectification circuits. With a maximum current rating of 30A and a reverse voltage rating of 30V, it is suitable for various electronic applications, including power supplies and converters. The device is housed in a compact surface-mount package (DPAK), which facilitates efficient heat dissipation and improves thermal performance. The LMBR130FT1G is known for its low leakage current and high reliability, making it an excellent choice for engineers seeking robust solutions in their designs.

Features

The LMBR130FT1G is a high-performance N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents up to 130A, ensuring robust performance in demanding environments.
3. Low On-State Resistance: It features a low R_DS(on) value, typically around 10 milliohms, which reduces power losses during operation.
4. Fast Switching Speed: The LMBR130FT1G is optimized for fast switching, enhancing efficiency in power conversion applications.
5. Thermal Performance: It has a high maximum junction temperature of 150°C, allowing for reliable operation under heat stress.
6. Package Type: The MOSFET is housed in a TO-220 package, facilitating effective heat dissipation and easy mounting.
These features make the LMBR130FT1G ideal for applications in power management, motor control, and DC-DC converters.

Package

The LMBR130FT1G is packaged in a SOT-23-3 surface-mount package, which is a compact, three-terminal form factor ideal for space-constrained applications.

Pinout

The LMBR130FT1G is a low-power N-channel MOSFET designed for various switching applications. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET and is where the input voltage is applied to turn the device on or off.
2. Drain (D): This pin is the output connection where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is typically connected to ground in low-side switching applications; current flows into the source from the drain when the MOSFET is activated.
The LMBR130FT1G operates with a maximum V_DS of 30V and a continuous current rating of 3.5A, making it suitable for low-voltage applications.

Manufacturer

The LMBR130FT1G is manufactured by ON Semiconductor. This company is a global semiconductor supplier that specializes in designing and manufacturing a wide range of semiconductor products, including discrete components, analog ICs, and power management solutions. ON Semiconductor serves various industries, including automotive, industrial, communications, and consumer electronics. They focus on providing energy-efficient technologies and solutions to meet the growing demand for sustainable and high-performance electronic devices.

Application

The LMBR130FT1G is a low-power Schottky barrier rectifier ideal for applications such as power supply circuits, voltage clamping, reverse polarity protection, and DC-DC converters. Its fast switching speed and low forward voltage drop make it suitable for use in mobile devices, consumer electronics, and power management systems.

Equivalent

The LMBR130FT1G is a Schottky barrier rectifier. Equivalent products include:
1. 1N5817
2. 1N5818
3. 1N5819
4. B130 (B series)
5. SR160
Always check specifications like voltage and current ratings to ensure compatibility.

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