LM5111-1MX

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LM5111-1MX

IC GATE DRVR LOW-SIDE 8SOIC

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  • Мфр. Часть #LM5111-1MX
  • Пакет
  • Лист данных LM5111-1MX DataSheet
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Спецификации

Part Status Obsolete
DigiKey Programmable Not Verified
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 3.5V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 3A, 5A
Input Type Non-Inverting
Rise / Fall Time (Typ) 14ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number LM5111

Обзор

Description

The LM5111-1MX is a high-speed dual low-side gate driver designed by Texas Instruments. It is used to drive MOSFETs or IGBTs in various applications, such as switch-mode power supplies, motor control, and other power electronics systems. The device features two independent drivers, each capable of sourcing and sinking high peak currents, which enables fast switching of power transistors.
Key specifications include an operating voltage range from 4.5V to 18V, a peak source current of 3A, and a peak sink current of 3A. The LM5111-1MX offers a propagation delay of approximately 25ns, ensuring minimal delay between input signal and output response. This makes it suitable for applications requiring rapid switching.
The device is available in a space-saving 8-pin package and includes features such as undervoltage lockout protection and thermal shutdown to enhance reliability. With its robust design, the LM5111-1MX is ideal for improving the efficiency and performance of power conversion systems by providing precise and reliable gate driving capabilities.

Features

The LM5111-1MX is a high-speed, dual-channel MOSFET driver designed to translate low-voltage control signals to the higher voltage required to drive power MOSFETs. Key features include:
1. Dual Channels: It provides two independent driver channels, allowing for flexible design configurations in power electronics applications.

2. High-Speed Performance: The driver boasts fast switching times with a typical rise and fall time of around 10 ns, enabling efficient operation in high-frequency applications.
3. Output Current Capability: Each channel can source and sink up to 5A, which is suitable for driving large gate charge MOSFETs.
4. Wide Input Voltage Range: It supports a wide operating voltage range from 3.5V to 14V, offering design flexibility.
5. Under-Voltage Lockout (UVLO): Ensures safe startup by preventing operation if the supply voltage is too low for reliable operation.
6. TTL/CMOS Compatible Inputs: The input thresholds are designed to be compatible with both TTL and CMOS logic levels.
7. Package Options: Available in a compact SOIC-8 package, making it suitable for space-constrained applications.
These features make the LM5111-1MX ideal for use in switched-mode power supplies, DC-DC converters, and other applications requiring efficient MOSFET driving capabilities.

Package

The LM5111-1MX is a dual gate driver IC from Texas Instruments, available in an 8-pin SOIC (Small Outline Integrated Circuit) package type.

Pinout

The LM5111-1MX is a dual-channel gate driver integrated circuit designed to drive MOSFETs and IGBTs in high-speed switching applications. It is housed in an 8-pin SOIC package.
The pin configuration and functions are as follows:
1. IN1: Input for Channel 1. It controls the state of the OUT1 pin.
2. GND: Ground reference for the device.
3. IN2: Input for Channel 2. It controls the state of the OUT2 pin.
4. VDD: Supply voltage for the device, typically ranging from 3.5V to 14V.
5. OUT2: Output for Channel 2, connected to the gate of the power transistor.
6. VDD: Repeated due to the package design, serves the same function as pin 4.
7. OUT1: Output for Channel 1, connected to the gate of the power transistor.
8. NC: No connection, often used for physical stability or compatibility with other IC footprints.
Each channel provides high current capability with a peak output current of 5A, suitable for efficient and rapid switching applications.

Manufacturer

The LM5111-1MX is manufactured by Texas Instruments. Texas Instruments, often abbreviated as TI, is a global semiconductor company that designs and manufactures a wide range of electronic components. TI is known for its analog and embedded processing products, which include microcontrollers, digital signal processors (DSPs), and power management devices, among others. The company serves various industries, including automotive, industrial, personal electronics, and communications equipment. Founded in 1930 and headquartered in Dallas, Texas, TI is recognized for its innovation in the field of electronics and its contribution to advancing technology across multiple sectors.

Application

The LM5111-1MX is a dual high-speed MOSFET driver used in power management applications. It is suitable for driving large capacitive loads, such as power MOSFETs and IGBTs, in high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits. Its wide operating voltage range and robust drive capability make it ideal for use in telecom, industrial, and automotive applications where efficient power conversion and fast switching are required.

Equivalent

The LM5111-1MX is a dual high-speed MOSFET driver. Equivalent products include:
1. Linear Technology LTC1693-1
2. ON Semiconductor NCP81074
3. Microchip Technology MIC4427
4. Maxim Integrated MAX4427
5. Texas Instruments UCC27201
These alternatives offer similar functionality and features. Always verify specifications and compatibility with your specific application.

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