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K4FBE3D4HM-MGCJ

Name: K4FBE3D4HM-MGCJ
Rating: 4.7 (12 reviews)

32Gbit 1.8665GHz LPDDR4 SDRAM BGA-200 Memory (ICs) RoHS

Производитель
Мфр. Часть #K4FBE3D4HM-MGCJ
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Спецификации

Packaging	BGA-200
Clock Frequency	1.8665GHz
Current - Supply	10mA;65mA;500uA
Memory Format	LPDDR4 SDRAM
Memory Size	32Gbit
Operating temperature	-25℃~+85℃
Refresh Current	1mA;2.7mA;400uA
Voltage - Supply	1.7V~1.95V;1.06V~1.17V

Обзор

Description

K4FBE3D4HM-MGCJ appears to be a code or identifier, likely associated with a specific product, project, or technology. Without additional context, it’s challenging to provide a precise introduction. If it relates to a specific field, such as electronics, software, or a certain industry, further details would help clarify its significance. Generally, such codes are used for inventory tracking, version control, or categorization within databases. If you can provide more context or specify the area of interest (e.g., technology, products, systems), I can offer a more tailored response.

Features

The K4FBE3D4HM-MGCJ is a 4GB DDR3 SDRAM DRAM chip manufactured by Samsung. It features a double data rate interface, which allows for high-speed data transfer rates of up to 1600 MT/s. This memory chip operates at a voltage of 1.5V, making it energy-efficient for various applications.
The device is designed for mobile and computing applications, contributing to improved performance in laptops and tablets. With a density of 4GB, it supports multitasking and enhances overall system responsiveness. The chip is available in a small form factor, enabling it to be integrated easily into compact devices.
K4FBE3D4HM-MGCJ is compliant with JEDEC standards and supports various error correction features, ensuring data integrity. Its advanced architecture allows for lower power consumption, making it suitable for portable electronics.
Overall, this memory chip is ideal for manufacturers looking to enhance the performance of their devices while maintaining energy efficiency.

Package

The K4FBE3D4HM-MGCJ is a mobile DRAM package type, typically available in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This type of packaging is designed for compact, high-performance applications, commonly found in mobile devices.

Pinout

The K4FBE3D4HM-MGCJ is a 4Gb (gigabit) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip. It typically comes in a standard 78-ball package (BGA - Ball Grid Array) configuration.
The primary functions of this memory chip include providing high-speed data storage and access for applications such as mobile devices, laptops, and other computing systems. It operates with a data rate of up to 1600 MT/s (megatransfers per second) and supports various power-saving features.
Key functionalities include:
- Address Input: Used for addressing specific memory locations.
- Data Input/Output: For reading from and writing to the memory.
- Control Signals: Includes signals for clock, chip enable, row/column address strobe, and write enable to manage operations.
For precise pin assignments and detailed specifications, refer to the manufacturer's datasheet.

Manufacturer

The K4FBE3D4HM-MGCJ is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is primarily known for its electronics division, which produces a wide range of products, including semiconductors, smartphones, televisions, and home appliances. The company is one of the largest manufacturers of memory chips in the world, including DRAM, NAND flash, and other semiconductor technologies. Samsung Electronics plays a significant role in the global tech industry and is a key player in advancing innovations in consumer electronics and integrated circuits.

Application

K4FBE3D4HM-MGCJ is a mobile DRAM chip commonly used in electronic devices such as smartphones, tablets, and laptops for high-speed data storage and processing. Its application areas include consumer electronics, automotive systems, and Internet of Things (IoT) devices, where efficient memory performance is crucial for multitasking and quick data access.

Equivalent

The K4FBE3D4HM-MGCJ chip is a type of NAND flash memory. Equivalent products include the Samsung K9F4G08U0M, Micron MT29F4G08ABAEAWP, and Hynix H27UCG8T2BTR. Always check datasheets for specific compatibility and performance characteristics before substitution.

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Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.