Изображения являются только для ссылки

K4B4G1646E-BYK0

Name: K4B4G1646E-BYK0
Rating: 4.7 (12 reviews)

1.28V~1.575V 4Gbit 800MHz DDR3L SDRAM FBGA-96 Memory (ICs) RoHS

Производитель
Мфр. Часть #K4B4G1646E-BYK0
Пакет
Лист данных
В наличии3489

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging	FBGA-96
Clock Frequency	800MHz
Current - Supply	35mA
Memory Format	DDR3L SDRAM
Memory Size	4Gbit
Operating temperature	-40℃~+95℃
Refresh Current	2mA
Voltage - Supply	1.28V~1.575V

Обзор

Description

K4B4G1646E-BYK0 is a type of DRAM (Dynamic Random Access Memory) chip produced by Samsung. Specifically, it is a 1Gb (gigabit) DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) component. This memory is commonly used in various electronic devices, including smartphones, tablets, and other computing applications, due to its efficient power consumption and performance characteristics.
The "K4B" prefix indicates it is a Samsung product, while the alphanumeric code signifies specific features such as pin configuration, speed grade, and organization. DDR3 technology allows for higher bandwidth compared to its predecessors, making it suitable for high-performance applications.
This particular model may come in different package types and configurations, impacting its use in design and integration into electronic systems. Understanding its specifications helps in selecting the right memory for specific applications in consumer electronics or industrial devices.

Features

The K4B4G1646E-BYK0 is a 4GB DDR3 SDRAM memory chip produced by Samsung. Key features include:
1. Density: 4GB capacity, suitable for various applications in computing and mobile devices.
2. Type: DDR3 SDRAM, offering improved performance and efficiency compared to earlier DDR2 technology.
3. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second), enhancing data transfer rates.
4. Voltage: Typically operates at 1.5V, which helps in reducing power consumption compared to older memory types.
5. Organization: Configured as 512M x 8 bits, allowing for efficient data handling.
6. Form Factor: Often available in BGA (Ball Grid Array) packaging, which is beneficial for space-constrained designs.
7. Applications: Commonly used in laptops, desktops, and other consumer electronics.
This memory chip is designed for high-performance applications, balancing speed, power efficiency, and capacity.

Package

The K4B4G1646E-BYK0 is a DRAM memory chip packaged in a 66-ball FBGA (Fine Ball Grid Array) format. This type of package is commonly used for mobile and embedded applications due to its compact size and efficient thermal performance.

Pinout

The K4B4G1646E-BYK0 is a 4Gb DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip. It has a total of 78 pins.
This memory chip operates at a voltage of 1.5V and supports a data rate of up to 1600 MT/s. It is organized as 512M x 4 bits and is typically used in various applications such as mobile devices, laptops, and other electronic systems requiring high-performance memory.
Key functions of its pins include:
- Data input/output (DQ pins)
- Address inputs (A pins)
- Command inputs (CMD pins)
- Clock inputs (CK and CK# pins)
- Power and ground (VDD and VSS pins)
- Chip select (CS) and write enable (WE) signals
This configuration allows for efficient data storage and retrieval in computing applications.

Manufacturer

The K4B4G1646E-BYK0 is manufactured by Samsung Electronics, a South Korean multinational company. Samsung is primarily known for its consumer electronics, semiconductors, and telecommunications equipment. Within the semiconductor space, Samsung is one of the largest manufacturers of DRAM and NAND flash memory. The K4B4G1646E-BYK0 specifically is a DDR3 SDRAM memory chip, utilized in various applications including computers, smartphones, and other electronic devices. Samsung's extensive research and development capabilities, along with its robust manufacturing processes, make it a leader in the global semiconductor industry.

Application

The K4B4G1646E-BYK0 is a 4Gb DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, smartphones, tablets, laptops, and desktop computers. It supports high-speed data processing and is suitable for memory-intensive tasks like gaming, multimedia processing, and cloud computing. Additionally, it is used in networking devices and embedded systems where efficient memory performance is critical.

Equivalent

The K4B4G1646E-BYK0 is a 1GB DDR3 SDRAM chip. Equivalent products include Samsung K4B4G1646E-BYK0, Hynix H5TQ1G83AFR, Micron MT41K1G4DA-125:E, and Nanya NT5CB256M16DP-125. Be sure to check specifications like pin configuration, voltage, and speed for compatibility.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.