K4B4G1646E-BMMA

The K4B4G1646E-BMMA is a 4 Gigabit (GB) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip designed for high-performance applications. It features a x4 data width architecture, making it suitable for use in various consumer electronics, including mobile devices, tablets, and laptops. The chip operates at a memory clock frequency of up to 1066 MHz, which allows for efficient data transfer rates.
This memory module complies with the DDR3 standard, providing lower power consumption compared to earlier DDR2 technologies, thus enhancing battery life in mobile applications. The K4B4G1646E-BMMA is organized in a 1G x 4 configuration, which makes it versatile for integration into various system layouts while ensuring high-speed processing capabilities.
Its advanced features include on-die termination, which improves signal integrity, and a wide range of operating conditions, ensuring reliability and performance across different environments. This makes the K4B4G1646E-BMMA an ideal choice for manufacturers seeking efficient and reliable memory solutions.

The K4B4G1646E-BMMA is a 4GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module offered by Samsung. It features a 64-bit data bus and operates at a voltage of 1.5V, which is standard for DDR3 memory. This memory chip is designed for high-performance applications, including laptops, desktops, and servers.
Key features include:
- Density: 4GB capacity
- Data Rate: Supports data rates up to 1600 MT/s (megatransfers per second)
- I/O Interface: 64-bit DDR3 interface
- Package Type: Available in a small, compact package suitable for various electronic designs.
- Temperature Range: Operates within commercial temperature ranges, making it suitable for consumer electronics.
- Low Power: Energy-efficient design to reduce power consumption.
This memory is ideal for enhancing system performance in multitasking and memory-intensive applications.

The K4B4G1646E-BMMA is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type is designed for efficient thermal performance and space-saving on PCBs.

The K4B4G1646E-BMMA is a DRAM (Dynamic Random Access Memory) chip produced by Samsung. It has a pin count of 78 pins and is packaged in a TSOP-II (Thin Small Outline Package) format.
This memory device features a 4Gb capacity organized as 512M x 16 bits. Its primary function is to serve as high-speed volatile memory in various applications, including consumer electronics, computers, and mobile devices. The chip operates at standard DDR3 SDRAM specifications, supporting data rates up to 1600 MT/s with a voltage supply of 1.5V.
Key features include low power consumption, enhanced performance through burst mode operation, and support for various memory access modes.

The K4B4G1646E-BMMA is manufactured by Samsung Electronics, a South Korean multinational electronics company. Samsung is a leading global player in the semiconductor industry, producing a wide range of products including memory chips, processors, displays, and consumer electronics. The K4B4G1646E-BMMA specifically is a 4Gb DDR3 SDRAM memory chip used in various applications such as smartphones, tablets, and computers. Samsung Electronics is known for its innovation and extensive research in technology, making it one of the largest manufacturers of memory and storage solutions in the world.

The K4B4G1646E-BMMA is a 4Gb DDR3 SDRAM memory chip primarily used in applications such as mobile devices, digital cameras, automotive electronics, and consumer electronics. It supports high-speed data processing, making it suitable for smartphones, tablets, and other portable computing devices that require efficient performance and low power consumption.

The K4B4G1646E-BMMA is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ4G63AFR
2. Micron MT41K256M16HA
3. Samsung K4B4G1646B
4. Nanya NT5CB256M16E
Always verify compatibility based on your specific application and requirements.