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K4B4G1646D-BHMA

Name: K4B4G1646D-BHMA
Rating: 4.7 (12 reviews)

Производитель
Мфр. Часть #K4B4G1646D-BHMA
Пакет
Лист данных K4B4G1646D-BHMA DataSheet
В наличии9693

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Спецификации

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8542.32.00.36
Automotive	No
PPAP	No
Chip Density (bit)	4G
Number of Bits/Word (bit)	16
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	105
Mounting	Surface Mount
PCB changed	96
Standard Package Name	BGA
Supplier Package	FBGA
Pin Count	96
DRAM Type	DDR3 SDRAM
Organization	256Mx16
Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	1866
Number of I/O Lines (bit)	16

Обзор

Description

The K4B4G1646D-BHMA is a DRAM chip produced by Samsung, specifically a 4Gb DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory). This memory device operates with a data rate of 1600 MT/s (megatransfers per second) and is designed for various applications, including consumer electronics, computing devices, and networking equipment.
Key features of the K4B4G1646D-BHMA include a 1.5V operating voltage, support for both x8 and x4 I/O configurations, and a 512MB density per chip. It employs a 6.4 GB/s bandwidth, making it suitable for high-performance tasks.
The chip is packaged in a compact 78-ball FBGA (Fine Ball Grid Array) format, facilitating space-efficient designs in modern electronics. The K4B4G1646D-BHMA is commonly used in laptops, desktops, and servers, contributing to enhanced system performance and efficiency.

Features

The K4B4G1646D-BHMA is a 4Gb (gigabit) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip produced by Samsung. It features a 512M x 4-bit configuration and operates at a data rate of 800 MT/s (megatransfers per second) with a core voltage of 1.5V. Key features include:
1. Density: 4Gb capacity, suitable for high-performance applications.
2. Speed: Operates at DDR3-800, providing improved bandwidth compared to earlier DDR standards.
3. Interface: Supports a 64-bit data interface, making it ideal for use in various computing environments.
4. Package: Offered in a small FBGA (Fine Ball Grid Array) package, ensuring compact designs.
5. Power Efficiency: Designed for low power consumption, enhancing battery life in portable devices.
6. Applications: Commonly used in smartphones, tablets, laptops, and other consumer electronics.
This component enhances the performance of devices requiring efficient memory solutions in compact formats.

Package

The K4B4G1646D-BHMA is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array). This package type is designed for reduced size and enhanced thermal performance, commonly used in mobile devices and portable applications.

Pinout

The K4B4G1646D-BHMA is a DRAM memory chip with a pin count of 78. It is a DDR3 SDRAM device, specifically designed for use in various applications, including computers and mobile devices. The chip features a 4Gb (gigabit) capacity organized in a 512Mb x 8 configuration, meaning it has 8 data bits per access.
Key functions of the K4B4G1646D-BHMA include data storage and retrieval, supporting high-speed operations due to DDR3 technology, which allows for double data rate transfer, effectively doubling the data throughput compared to earlier generations. The device operates on a supply voltage of 1.5V and supports various memory functions such as burst read/write operations, random access, and refresh capabilities.
Overall, its design provides a balance of performance and efficiency, making it suitable for modern memory applications.

Manufacturer

The K4B4G1646D-BHMA is manufactured by Samsung Electronics, a South Korean multinational company. Samsung is one of the largest producers of electronic components, including memory chips, semiconductors, and display technologies. The company operates in various sectors, including consumer electronics, telecommunications, and digital media, and is recognized as a leader in innovation and technology. Samsung's semiconductor division, in particular, is a major player in the global memory market, producing DRAM and NAND flash memory used in a wide range of devices, from smartphones to data centers.

Application

The K4B4G1646D-BHMA is a 4 Gb DDR3 SDRAM memory chip commonly used in applications such as smartphones, tablets, and other portable devices. Its high-speed performance and low power consumption make it suitable for consumer electronics, automotive electronics, networking equipment, and industrial applications requiring efficient data processing and storage solutions.

Equivalent

The K4B4G1646D-BHMA chip is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Micron MT41K256M16HA-125
2. Hynix H5TQ4G63AFR-PBC
3. Samsung K4B4G1646D-BCMA
4. Nanya NT5CB256M16DP-DI
Always check specifications for compatibility.

Доставка

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Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.