Изображения являются только для ссылки

K4B4G0846E-BCNB

Name: K4B4G0846E-BCNB
Rating: 4.7 (12 reviews)

4Gbit 1.5V DDR3 SDRAM FBGA-78 Memory (ICs) RoHS

Производитель
Мфр. Часть #K4B4G0846E-BCNB
Пакет
Лист данных
В наличии22444

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging	FBGA-78
Memory Format	DDR3 SDRAM
Memory Size	4Gbit
Operating temperature	0℃~+85℃
Voltage - Supply	1.5V

Обзор

Description

K4B4G0846E-BCNB is a type of NAND Flash memory chip produced by Samsung. Specifically, it is a 4 gigabit (Gb) device that typically utilizes a multi-level cell (MLC) architecture. This chip is designed for use in various applications, including smartphones, tablets, and other consumer electronics, providing efficient data storage solutions with high read and write speeds. The "BCNB" suffix generally indicates specific features or configurations, such as temperature range or packaging type.
In terms of performance, this memory chip offers reliable endurance and is often utilized in environments requiring fast data access and high storage capacity. Its compatibility with various interfaces makes it a versatile choice for manufacturers looking to integrate NAND Flash memory into their products. Overall, K4B4G0846E-BCNB plays a critical role in enhancing the performance and efficiency of electronic devices.

Features

The K4B4G0846E-BCNB is a DRAM memory chip produced by Samsung, commonly used in mobile devices. Here are its key features:
1. Type: It is a low-power DDR (LPDDR) DRAM, designed for mobile applications.
2. Capacity: The chip offers a density of 4 Gb (gigabits), making it suitable for smartphones and tablets.
3. Data Rate: It supports high data rates, enhancing performance for multitasking and graphics-intensive applications.
4. Voltage: Operates at a low voltage, which helps in power efficiency and extends battery life.
5. Package: Typically comes in a compact package, contributing to smaller device form factors.
6. Technology: Utilizes advanced manufacturing processes for improved reliability and speed.
This combination of features makes the K4B4G0846E-BCNB ideal for high-performance mobile computing while maintaining energy efficiency.

Package

The K4B4G0846E-BCNB is a DRAM memory device packaged in a 78-ball FBG (Fine Pitch Ball Grid Array) format, which is suitable for mobile applications. This packaging allows for efficient heat dissipation and compact integration in various electronic devices.

Pinout

The K4B4G0846E-BCNB is a 4Gb DDR4 SDRAM memory chip manufactured by Samsung. It features a pin count of 96 balls in a BGA (Ball Grid Array) package. The primary functions of this chip include providing high-speed data storage and retrieval for various applications, including smartphones, tablets, and other computing devices. It operates at a voltage of 1.2V and supports data rates up to 2400 MT/s. The chip is designed for use in systems that require efficient memory solutions, offering low power consumption and high performance.

Manufacturer

The manufacturer of the K4B4G0846E-BCNB is Samsung Electronics. Samsung is a South Korean multinational conglomerate that operates in various sectors, including consumer electronics, information technology, telecommunications, and semiconductor manufacturing. The company is one of the largest producers of memory chips globally, including DRAM and NAND flash memory. Samsung Electronics is renowned for its innovation and high-quality products in the electronics market, making it a key player in the global technology landscape.

Application

The K4B4G0846E-BCNB is a mobile DRAM (Dynamic Random-Access Memory) chip primarily used in applications such as smartphones, tablets, and other portable devices. It supports high-performance computing needs and is suitable for gaming, multimedia processing, and data-intensive tasks. Additionally, it can be utilized in laptops and compact computing devices where efficient power consumption and high speed are essential.

Equivalent

The K4B4G0846E-BCNB chip is a 4 Gb DDR3 SDRAM memory chip. Equivalent products include:
1. MT41K256M16HA-125 (Micron)
2. H5TQ4G83EFR-PBA (SK Hynix)
3. IS43TR16640B-125B (ISSI)
Ensure to check specifications for compatibility, as variations in timing and packaging may exist.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.