JS28F512P30EFA

The JS28F512P30EFA is a 512Mb (64MB) NOR Flash memory device designed for embedded applications. It operates on a supply voltage range of 2.7V to 3.6V, making it suitable for low-power applications. This memory device features a parallel interface for fast data access and supports standard command sets for read, program, and erase operations.
Key specifications include a high-speed read access time, typically around 70ns, and a program time of around 100µs per word. The device supports multiple memory sectors, allowing for flexibility in data management and efficient use of memory space. The JS28F512P30EFA is commonly used in applications such as mobile phones, automotive systems, and industrial devices, where non-volatile memory is essential for storing firmware and critical data.
Overall, it provides reliable performance, endurance, and data retention, making it a popular choice for various embedded system designs.

The JS28F512P30EFA is a 512Mb NOR Flash memory device featuring the following key characteristics:
1. Density: 512 Megabits (64 Megabytes).
2. Interface: Supports parallel interface for easy integration with various microcontrollers and processors.
3. Access Speed: Offers a fast read access time, typically around 70 ns.
4. Voltage Range: Operates on a supply voltage of 2.7V to 3.6V, suitable for low-power applications.
5. Program/Erase Cycles: Equipped with a minimum of 100,000 program/erase cycles per sector, ensuring longevity.
6. Data Retention: Provides a data retention period of up to 20 years.
7. Sector Architecture: Contains multiple sectors for flexibility in memory management and efficient data handling.
8. Read/Program/Erase: Supports simultaneous read, program, and erase functions for efficient performance.
9. Temperature Range: Designed for industrial applications, it operates in a wide temperature range.
These features make the JS28F512P30EFA suitable for applications requiring reliable, high-capacity, and fast non-volatile memory solutions.

The JS28F512P30EFA is a 512 Mbit NOR Flash memory device, typically offered in a 48-ball FBGA (Fine Ball Grid Array) package. This package type provides a compact footprint and support for high-density applications.

The JS28F512P30EFA is a NAND Flash memory device with a pin count of 48. This device is designed for high-density storage applications and features an organization of 512Mbit (64MB) per die. Its primary functions include providing non-volatile memory storage, supporting various interface protocols, and enabling efficient data management through features like wear leveling and error correction.
The key functions of the pins include power supply, ground, data input/output, command, and address lines, as well as control signals necessary for memory operations. The device typically operates in a serial interface mode, allowing for streamlined communication with host controllers. It's commonly used in applications like mobile devices, automotive systems, and consumer electronics due to its compact form factor and performance characteristics.

The JS28F512P30EFA is manufactured by Intel Corporation. Intel is a multinational technology company based in the United States, primarily known for designing and manufacturing semiconductor products, including microprocessors, memory devices, and integrated circuits. Founded in 1968, Intel is a leader in the computer hardware industry and plays a significant role in the development of various computing technologies. The JS28F512P30EFA itself is a flash memory component, typically used in embedded systems and various consumer electronics. Intel is renowned for its innovation and contributions to computing technology, including advancements in microprocessor design and memory solutions.

The JS28F512P30EFA is a 512 Mb NAND Flash memory device commonly used in applications such as consumer electronics (smartphones, tablets), automotive systems (infotainment, navigation), industrial automation, and embedded systems. It provides high-density data storage and is suitable for firmware, software, and data storage in devices requiring fast read/write capabilities and reliable performance.

The JS28F512P30EFA chip is a 512Mb NAND flash memory. Equivalent products include:
1. Micron MT29F512G08CBAC
2. Samsung K9GAG08U0M
3. Hynix H26M51202G2A
Ensure compatibility with the specific requirements of the application, as pin configurations and electrical characteristics may vary.