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JS28F512M29EWHA

Name: JS28F512M29EWHA
Rating: 4.7 (12 reviews)

IC FLASH 512MBIT PARALLEL 56TSOP

Производитель
Мфр. Часть #JS28F512M29EWHA
Пакет
Лист данных
В наличии6499

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Спецификации

Part Status	Obsolete
Base Product Number	JS28F512M29
DigiKey Programmable	Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	512Mbit
Memory Organization	64M x 8, 32M x 16
Memory Interface	Parallel
Write Cycle Time - Word, Page	110ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	56-TSOP
Packaging	Tray
Access Time	110 ns

Обзор

Description

The JS28F512M29EWHA is a 512Mb (64MB) NAND Flash memory chip developed by Micron Technology. It utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits per cell, which enhances storage density. This chip is typically used in applications requiring substantial data storage, such as mobile devices, consumer electronics, and embedded systems.
Key features include support for a range of interfaces (e.g., ONFI), high-speed read and write operations, and advanced error correction capabilities, which improve data integrity and performance. The JS28F512M29EWHA is designed for reliability, with mechanisms for wear leveling and bad block management, which extend the lifespan of the memory.
This NAND Flash memory is ideal for applications where space and performance are critical, making it a popular choice among manufacturers seeking efficient storage solutions.

Features

The JS28F512M29EWHA is a NAND Flash memory device featuring the following key specifications:
1. Density: 512Mb (64MB) storage capacity.
2. Interface: Supports a parallel interface, making it compatible with various microcontrollers and processors.
3. Organization: It is organized as 64 pages of 8 bytes each, allowing for efficient data management and retrieval.
4. Access Time: Offers fast access times, ensuring quick read and write operations.
5. Endurance: Designed for high endurance, typically supporting a large number of program and erase cycles.
6. Data Retention: Provides robust data retention capabilities, ensuring stored data remains intact over time.
7. Low Power Consumption: Optimized for low power usage, making it suitable for battery-operated devices.
8. Reliability: Features built-in error correction mechanisms to enhance data integrity and reliability.
This device is commonly used in applications such as mobile phones, consumer electronics, and embedded systems where compact and efficient storage is required.

Package

The JS28F512M29EWHA is a NAND flash memory device packaged in a TSOP (Thin Small Outline Package) format. This package type is designed for surface mounting and offers a compact footprint suitable for space-constrained applications in consumer electronics and embedded systems.

Manufacturer

The manufacturer of the JS28F512M29EWHA is Intel Corporation. Intel is a multinational technology company primarily known for designing and manufacturing semiconductor products, particularly microprocessors for computer systems. Founded in 1968, Intel is a leading player in the semiconductor industry and is pivotal in the development of microchips for personal computers, servers, and various electronic devices. The company also engages in research and development of technologies related to artificial intelligence, cloud computing, and the Internet of Things (IoT). Intel's extensive portfolio includes memory products, such as flash memory, and it plays a crucial role in advancing computing technologies globally.

Application

The JS28F512M29EWHA is a NAND flash memory device commonly used in applications such as mobile devices, consumer electronics, automotive systems, industrial automation, and embedded systems. Its high density and performance make it suitable for data storage in smartphones, tablets, digital cameras, and solid-state drives (SSDs), enabling fast data access and reliable storage solutions.

Equivalent

The JS28F512M29EWHA chip is a 512Mb NAND flash memory. Equivalent products include:
1. Micron MT29F512G08
2. Samsung K9F2G08U0M
3. Hynix H27UAG8T2BTR
4. Toshiba TH58NVG5D2FL
5. Winbond W29N512G
Always verify specific features and compatibility before substitution.

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Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.