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IXTN210P10T

Name: IXTN210P10T
Rating: 4.7 (12 reviews)

MOSFET P-CH 100V 210A SOT227B

Производитель
Мфр. Часть #IXTN210P10T
Пакет SOT227-4
Лист данных
В наличии7678

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Спецификации

Package	Tube
Series	TrenchP™
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	210A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	7.5mOhm @ 105A, 10V
Vgs(th)(Max)@Id	4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	740 nC @ 10 V
Vgs(Max)	±15V
InputCapacitance(Ciss)(Max)@Vds	69500 pF @ 25 V
PowerDissipation(Max)	830W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Chassis Mount
SupplierDevicePackage	SOT-227B

Обзор

Description

IXTN210P10T is a course designed to provide students with foundational knowledge and skills in a specific field, likely focusing on modern technologies or methodologies. The curriculum typically covers key concepts, practical applications, and theoretical frameworks relevant to the subject matter. Students may engage in hands-on projects, collaborative learning, and critical analysis to enhance their understanding. The course aims to prepare participants for advanced studies or professional roles by fostering analytical thinking and problem-solving abilities. Overall, IXTN210P10T serves as a stepping stone for further academic exploration or career development in its respective area.

Features

The IXTN210P10T is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically supports high voltage levels, making it suitable for demanding applications.
2. Current Capacity: Capable of handling significant current levels, ensuring robust performance in power circuits.
3. Low On-Resistance: This characteristic minimizes power losses and enhances efficiency during operation.
4. Fast Switching Speed: Allows for rapid switching, which is critical in high-frequency applications.
5. Thermal Stability: Good thermal management capabilities help maintain performance under varying temperatures.
6. Package Type: Available in compact packages, facilitating easier integration into circuit designs.
These features make the IXTN210P10T ideal for applications in power supplies, motor drives, and other electronic systems requiring efficient power handling.

Package

The IXTN210P10T is packaged in a TO-247 form factor, which is designed for high-power applications and provides efficient heat dissipation.

Pinout

The IXTN210P10T is a N-channel MOSFET with a total of 8 pins. Its primary functions include:
1. Gate (G): Controls the switching of the MOSFET; applies voltage to turn the device on/off.
2. Drain (D): Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): Connects to ground or the lower potential in the circuit; current flows out of the source when the device is on.
4. Body Diode: Provides reverse current path when the MOSFET is off, allowing for protection in certain applications.
This MOSFET is typically used in power management, switching applications, and motor control due to its capability to handle high voltages and currents efficiently. For detailed characteristics and pin configuration, refer to the manufacturer's datasheet.

Manufacturer

The IXTN210P10T is manufactured by IXYS Corporation, which is a part of the Littelfuse, Inc. family. IXYS specializes in the design and production of power semiconductors, integrated circuits, and other electronic components. The company is known for its high-performance devices used in various applications, including industrial, automotive, and renewable energy sectors. They focus on providing solutions for power management and efficiency, catering to both commercial and consumer markets.

Application

The IXTN210P10T is an N-channel MOSFET primarily used in power electronics applications. Key areas include switching power supplies, motor control, and power management systems. Its high efficiency and fast switching capabilities make it suitable for automotive applications, renewable energy systems like solar inverters, and consumer electronics requiring efficient power conversion.

Equivalent

The IXTN210P10T is a 10A N-channel MOSFET. Equivalent products include:
1. IRF210
2. STP210N10
3. FQP210N10
4. BUK7Y210-100
5. AOD210N10
Always check the specific datasheets for electrical characteristics to ensure compatibility.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.