IXFX180N10

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IXFX180N10

MOSFET N-CH 100V 180A PLUS247

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  • Мфр. Часть #IXFX180N10
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Спецификации

Series HiPerFET™
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 390 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10900 pF @ 25 V
Power Dissipation (Max) 560W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXFX180

Обзор

Description

The IXFX180N10 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is manufactured by IXYS Corporation, known for its advanced power semiconductor technologies. This MOSFET features a high current capacity of 180A and a voltage rating of 100V, making it suitable for demanding applications such as motor control, power supplies, and DC-DC converters.
Key characteristics include low on-resistance, which minimizes power loss and enhances efficiency, and fast switching capabilities, which allow for high-frequency operation. The IXFX180N10 is typically used in environments where reliability and performance are critical, such as in industrial systems, automotive electronics, and renewable energy setups.
The component is housed in a robust TO-247 package, offering good heat dissipation and easy integration into circuit designs. Its design ensures high thermal stability and low gate charge, contributing to its efficiency in high-power applications. Overall, the IXFX180N10 is a versatile and reliable choice for engineers looking to optimize power management and system performance.

Features

The IXFX180N10 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for switching and amplification in electronic circuits. Here are its key features:
1. N-Channel MOSFET: This device uses an N-channel for conductivity, allowing current to flow easily when a positive voltage is applied to the gate.
2. Voltage and Current Ratings: It typically has a high breakdown voltage (V_DS) of 100V and can handle continuous currents up to 180A, making it suitable for high-power applications.
3. R_DS(on): The on-resistance is low, contributing to higher efficiency and reduced power loss during operation.
4. Fast Switching: The IXFX180N10 is designed for fast switching speeds, which improves performance in applications requiring quick ON/OFF cycling.
5. Thermal Management: It often comes with features or options to enhance thermal performance, such as packages designed for heat dissipation.
6. Applications: Commonly used in automotive, industrial, and consumer electronics for applications like power supplies, motor drives, and converters.
These features make the IXFX180N10 an efficient choice for high-power and high-efficiency applications. Always refer to the datasheet for specific parameters and conditions.

Package

The IXFX180N10 is a power MOSFET, and it typically comes in a TO-247 package type. TO-247 is a standard, large, through-hole package designed to handle higher power levels, commonly used for power semiconductors.

Pinout

The IXFX180N10 is a N-channel MOSFET manufactured by IXYS. It typically comes in a TO-220 package, which usually has three pins: the gate, drain, and source. Here’s a brief description of their functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage here, you can turn the MOSFET on or off.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is where the current flows into the MOSFET.
The IXFX180N10 is used for high-efficiency power management applications, thanks to its low on-resistance and high current capacity. Its specifications make it suitable for applications like DC-DC converters, motor drives, and power supply designs. Always refer to the datasheet for precise and detailed specifications.

Manufacturer

The IXFX180N10 is manufactured by IXYS Corporation, which is a part of Littelfuse, Inc. IXYS is known for producing power semiconductors and integrated circuits. The company specializes in a variety of products used for power conversion and control in various applications, including industrial, telecommunications, automotive, and consumer electronics. IXYS’s products are widely used for improving energy efficiency and performance in electronic systems. As a part of Littelfuse, IXYS continues to contribute to the broader portfolio of electronic components and technologies.

Application

The IXFX180N10 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in applications requiring efficient power switching. Its application areas include power supplies, motor control, DC-DC converters, and inverters. It is suitable for use in industrial, automotive, and consumer electronics where high current handling and fast switching are necessary. Its characteristics, such as low on-resistance and high current capability, make it ideal for enhancing efficiency in power management systems.

Equivalent

The IXFX180N10 is a power MOSFET, and its equivalent products include similar N-channel MOSFETs with comparable specifications. Some equivalents are:
1. IRF3710
2. IRF4110
3. STP110N10F7
4. NTE3204
Ensure to verify the specifications such as voltage, current ratings, and package type to confirm compatibility.

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