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IXFN360N15T2

Name: IXFN360N15T2
Rating: 4.7 (12 reviews)

MOSFET N-CH 150V 310A SOT227B

Производитель
Мфр. Часть #IXFN360N15T2
Пакет
Лист данных IXFN360N15T2 DataSheet
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Спецификации

Series	HiPerFET™, TrenchT2™
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	310A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	715 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	47500 pF @ 25 V
Power Dissipation (Max)	1070W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC
Base Product Number	IXFN360

Обзор

Description

The IXFN360N15T2 is a high-performance N-channel MOSFET produced by IXYS Corporation, designed for various power applications. It features a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) of 360A, making it suitable for high-power switching applications, such as inverters, converters, and motor drives.
Key specifications include a low on-resistance (R_DS(on)), typically around 0.015 ohms, which enhances efficiency by reducing power loss during operation. The device is housed in a robust TO-247 package, enabling effective heat dissipation and durability in demanding environments.
The IXFN360N15T2 is particularly valued in industrial and automotive applications due to its reliability and performance. Its fast switching capabilities also contribute to improving overall system efficiency and responsiveness. Additionally, the MOSFET is designed to handle high-frequency operation, making it versatile for various circuit designs.

Features

The IXFN360N15T2 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of 360A, allowing it to manage significant loads effectively.
3. R_DS(on): The on-resistance is low (typically around 6.5 mΩ), which enhances efficiency by minimizing conduction losses.
4. Gate Charge (Q_g): It has a relatively low gate charge, facilitating faster switching speeds and reducing power loss during switching.
5. Thermal Performance: With a high thermal conductivity and a robust package design, it supports effective heat dissipation.
6. Applications: Suitable for use in power supplies, converters, and motor drives.
Overall, the IXFN360N15T2 is ideal for applications requiring high current and voltage handling with low energy losses.

Package

The IXFN360N15T2 is packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal performance and ease of mounting in various electronic circuits.

Pinout

The IXFN360N15T2 is an N-channel MOSFET with a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin is used to control the MOSFET operation; applying a voltage here allows the device to turn on and conduct current.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply; it serves as the reference point for the drain current.
The IXFN360N15T2 is designed for high efficiency and low on-resistance, making it suitable for applications like power management and switch-mode power supplies.

Manufacturer

The IXFN360N15T2 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS is a global company specializing in the design and manufacture of power semiconductors and integrated circuits. Their products are used in various applications, including renewable energy, electric vehicles, industrial automation, and telecommunications. IXYS is known for its innovative solutions in power management and is recognized for its expertise in high-performance power devices, such as MOSFETs, IGBTs, and rectifiers. The company focuses on advancing semiconductor technology to enhance efficiency and reliability in electronic systems.

Application

The IXFN360N15T2 is an N-channel MOSFET typically used in applications such as power management systems, DC-DC converters, motor drives, and inverters. It is suitable for high-efficiency switching applications due to its low on-resistance and high-speed operation. Commonly found in renewable energy systems, automotive electronics, and industrial automation, it enhances performance in power electronics designs.

Equivalent

The IXFN360N15T2 is an N-channel MOSFET with a voltage rating of 150V and a current rating of 360A. Equivalent products include:
1. IRF3205 (55V, 110A)
2. STP75NF75 (75V, 75A)
3. FQA36N15 (150V, 36A)
Always verify specifications and performance characteristics before substitution.

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