Изображения являются только для ссылки

IXFH150N17T2

Name: IXFH150N17T2
Rating: 4.7 (12 reviews)

MOSFET N-CH 175V 150A TO247AD

Производитель
Мфр. Часть #IXFH150N17T2
Пакет
Лист данных IXFH150N17T2 DataSheet
В наличии6927

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Series	HiPerFET™, TrenchT2™
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	175 V
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	233 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14600 pF @ 25 V
Power Dissipation (Max)	880W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Package / Case	TO-247-3
Base Product Number	IXFH150

Обзор

Description

The IXFH150N17T2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient power management. With a maximum drain-source voltage (V_DS) of 170V and a continuous drain current (I_D) of 150A, it is well-suited for high-voltage and high-current applications. The device features low on-resistance (R_DS(on)), which minimizes power loss and improves thermal performance. Its fast switching capabilities make it ideal for use in switch-mode power supplies, motor drives, and other power conversion systems. The IXFH150N17T2 is packaged in a TO-220 format, facilitating easy heat dissipation and integration into various electronic circuits. Overall, this MOSFET is an excellent choice for engineers looking to enhance the efficiency and reliability of their power electronic designs.

Features

The IXFH150N17T2 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 170V, making it suitable for high-voltage applications.
2. Current Rating: With a continuous drain current (I_D) rating of 150A, it can handle significant loads.
3. R_DS(on): The on-resistance is typically very low (around 0.04Ω), which contributes to reduced power losses during operation.
4. Fast Switching: Designed for high switching speeds, it is well-suited for applications like DC-DC converters and motor drives.
5. Thermal Management: Features a TO-247 package that provides effective heat dissipation.
6. Robustness: High avalanche energy rating improves reliability in tough conditions.
These attributes make the IXFH150N17T2 suitable for various applications in power electronics, including industrial drives, renewable energy systems, and automotive applications.

Package

The IXFH150N17T2 is packaged in a TO-220 form factor, which is commonly used for power transistors. This package type provides good thermal performance and allows for easy mounting to heatsinks for effective heat dissipation.

Pinout

The IXFH150N17T2 is an N-channel MOSFET with a pin count of 4. Its pin configuration is as follows:
1. Gate (G): Controls the turning on and off of the MOSFET.
2. Drain (D): The output terminal where the current flows out when the device is on.
3. Source (S): The terminal that connects to the ground or negative side of the circuit.
This device is designed for high-voltage applications, with a maximum drain-source voltage of 170V and a continuous drain current of up to 150A. It features low on-resistance, making it suitable for power conversion and switching applications.

Manufacturer

The IXFH150N17T2 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductors and integrated circuits, particularly in areas such as power management, renewable energy, and industrial applications. The company is known for its innovations in high-voltage, high-speed, and high-power semiconductor devices, including MOSFETs, IGBTs, and diodes. IXYS serves various sectors, including automotive, telecommunications, and industrial automation, providing solutions that enhance energy efficiency and performance in electronic systems.

Application

The IXFH150N17T2 is a high-voltage N-channel MOSFET primarily used in power conversion applications, including DC-DC converters, power supplies, and motor drives. It is suitable for automotive applications, renewable energy systems, and industrial equipment due to its high efficiency, fast switching speed, and thermal performance. Its characteristics make it ideal for high-frequency and high-voltage operations in various electronic circuits.

Equivalent

The IXFH150N17T2 is an N-channel MOSFET with a 150V rating and 170A current capability. Equivalent products include the Infineon IPP150N17N3, Vishay SIHP150N17, and STMicroelectronics STP150NF17. Always verify specifications such as R_DS(on), gate charge, and thermal resistance when considering equivalents for specific applications.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.