ISL9R3060G2

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ISL9R3060G2

DIODE GEN PURP 600V 30A TO247-2

  • Производитель
  • Мфр. Часть #ISL9R3060G2
  • Пакет TO-247-2
  • Лист данных
  • В наличии4502

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Спецификации

Package Tube
Series Stealth™
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 600 V
Current-AverageRectified(Io) 30A
Voltage-Forward(Vf)(Max)@If 2.4 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 45 ns
Current-ReverseLeakage@Vr 100 µA @ 600 V
MountingType Through Hole
Package/Case TO-247-2
SupplierDevicePackage TO-247-2

Обзор

Description

The ISL9R3060G2 is a high-performance N-channel MOSFET designed for use in power management applications. It features a low on-resistance of 6.5 mΩ, enabling efficient power conversion and minimizing energy loss. With a maximum drain-source voltage (V_DS) rating of 60V and a continuous drain current rating of 30A, it is suitable for various applications, including DC-DC converters, power supplies, and electric vehicles.
The device is housed in a TO-220 package, providing excellent thermal performance and ease of mounting. It is optimized for fast switching speeds, making it ideal for high-frequency applications. Additionally, the ISL9R3060G2 is equipped with a gate threshold voltage (V_GS(th)) that allows for reliable operation in a wide range of conditions.
Overall, the ISL9R3060G2 is a versatile and efficient component in modern electronic designs, contributing to improved energy efficiency and performance in power electronic circuits.

Features

The ISL9R3060G2 is a high-performance N-channel MOSFET designed for use in various power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Capacity: It can handle continuous drain currents up to 30A, offering robust performance in power circuits.
3. Low R_DS(on): The device boasts a low on-resistance (R_DS(on)) of around 10.5 mΩ, which helps reduce power losses and improves efficiency.
4. Fast Switching Speed: Optimized for fast switching, it enhances performance in applications such as DC-DC converters and inverter circuits.
5. Thermal Performance: It features a TO-220 package, providing effective heat dissipation.
6. Gate Threshold Voltage (V_GS(th)): The threshold voltage is low, enabling easy driving with standard gate voltages.
7. Applications: Commonly used in power supplies, motor drives, and automotive applications.
These features make the ISL9R3060G2 a versatile and efficient choice for various electronic designs.

Package

The ISL9R3060G2 is a high-performance N-channel MOSFET packaged in a TO-220 style. This package type provides efficient thermal management and is suitable for power applications, ensuring effective heat dissipation and robust performance in various electronic circuits.

Pinout

The ISL9R3060G2 is an N-channel MOSFET with a pin count of 8. It is designed for power applications, featuring a low on-resistance and high-speed switching capabilities. The primary functions include serving as a switch for electronic circuits, enabling efficient control of power in various applications such as DC-DC converters, power supplies, and motor drives.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load.
3. Source (S) - Connects to ground or the negative side of the power supply.
4. Body Diode (internal) - Provides reverse current path.
The device is optimized for high efficiency and thermal performance, making it suitable for demanding applications. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.

Manufacturer

The ISL9R3060G2 is manufactured by Renesas Electronics Corporation. Renesas is a global semiconductor company that specializes in microcontrollers, microprocessors, and various other semiconductor devices. The company is known for its focus on automotive, industrial, and consumer electronics applications, providing solutions for various sectors including automotive safety, industrial automation, and IoT (Internet of Things). Renesas aims to develop innovative technologies that support the growing demand for smart devices and systems.

Application

The ISL9R3060G2 is an N-channel MOSFET used in various applications, including power management systems, DC-DC converters, and industrial power supplies. Its features make it suitable for high-efficiency switching applications, motor drives, and battery management systems. Additionally, it can be utilized in renewable energy systems and electric vehicles for efficient power conversion and control.

Equivalent

The ISL9R3060G2 is a high-performance N-channel MOSFET. Equivalent products include the Infineon IRF3205, STMicroelectronics STP75NF75, and Texas Instruments CSD19536KCS. Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility in your specific application.

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