Изображения являются только для ссылки

IS42S32160F-6BLI

Name: IS42S32160F-6BLI
Rating: 4.7 (12 reviews)

IC DRAM 512MBIT PARALLEL 90TFBGA

Производитель
Мфр. Часть #IS42S32160F-6BLI
Пакет 90-TFBGA
Лист данных IS42S32160F-6BLI DataSheet
В наличии5475

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM
MemorySize	512Mb (16M x 32)
MemoryInterface	Parallel
ClockFrequency	167 MHz
AccessTime	5.4 ns
Voltage-Supply	3V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	90-TFBGA

Обзор

Description

The IS42S32160F-6BLI is a 32 Megabit (4 Megabyte) DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip developed by ISMT. It is organized as 2x16 bits, providing high-speed data transfer rates suitable for various applications, including consumer electronics, telecommunications, and computing devices.
Key features include a 6ns cycle time, operating voltage of 1.5V, and support for multiple data rates up to 1600 MT/s. The device is designed to operate with a simple interface and is compatible with various DDR3 standards. Additionally, it incorporates advanced power-saving modes, making it suitable for energy-efficient designs.
The IS42S32160F-6BLI is available in a compact 78-ball FBGA (Fine Ball Grid Array) package, facilitating easy integration into compact circuit designs. Overall, this memory chip provides reliable performance and efficiency, making it an ideal choice for applications requiring moderate memory capacity and speed.

Features

The IS42S32160F-6BLI is a 32Mb (4MB) asynchronous SRAM chip from Integrated Silicon Solution, Inc. Key features include:
1. Organization: 4M x 8 bits, allowing for a total of 32Mb storage capacity.
2. Access Time: Fast access time of 6 ns, suitable for high-speed applications.
3. Operating Voltage: Typically operates at a voltage of 3.0V to 3.6V.
4. Package Type: Available in a 48-pin TSOP II package, facilitating compact design.
5. Low Power Consumption: Designed for low-power operation, making it ideal for battery-operated devices.
6. Asynchronous Operation: Supports asynchronous read and write operations, providing flexibility in data processing.
7. Data Retention: Maintains data integrity during power-down conditions.
This chip is commonly used in a variety of applications, including networking equipment, telecommunications, and consumer electronics, where high-speed data processing is essential.

Package

The IS42S32160F-6BLI is a 256Mb DDR3 SDRAM memory chip, packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for high-density applications, providing efficient thermal management and space-saving benefits in electronic devices.

Pinout

The IS42S32160F-6BLI is a 32M x 16-bit (512Mbit) synchronous dynamic random-access memory (SDRAM) chip. It features a pin count of 54 pins in a TSOP-II (Thin Small Outline Package) configuration.
Key functions of the IS42S32160F-6BLI include:
1. Data Storage: It stores data in a 32M x 16-bit array.
2. Synchronous Operation: Operates synchronously with the clock signal, providing high-speed access.
3. Burst Read/Write: Supports burst read and write operations to enhance throughput.
4. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered devices.
5. Multiple Bank Operation: Features multiple banks for concurrent operations, improving efficiency in data access.
This chip is commonly used in applications such as consumer electronics, networking equipment, and other devices requiring fast and efficient memory solutions.

Manufacturer

The IS42S32160F-6BLI is manufactured by Integrated Silicon Solution, Inc. (ISSI), a semiconductor company based in the United States. ISSI specializes in designing and producing a wide range of memory products, including SRAM, DRAM, and Flash memory. The company focuses on providing high-performance, reliable memory solutions for various applications, including consumer electronics, automotive, telecommunications, and industrial markets. Established in 1988, ISSI has built a reputation for innovation and quality in the semiconductor industry.

Application

The IS42S32160F-6BLI is a 2Gb DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, mobile devices, embedded systems, networking equipment, and industrial applications. It provides high-speed data processing and is suitable for computing devices, gaming consoles, and automotive systems where efficient memory performance is essential.

Equivalent

The IS42S32160F-6BLI chip is a 32Mb (4MB) DDR SDRAM. Equivalent products include the Micron MT48LC16M16A2P-75, Samsung K4S641632E, and Hynix HY57V161620G. Always verify specifications like speed, voltage, and package type for compatibility before substitution.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.