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IRLR3636TRPBF

Name: IRLR3636TRPBF
Rating: 4.7 (12 reviews)

IRLR3636 - 12V-300V N-CHANNEL PO

Производитель
Мфр. Часть #IRLR3636TRPBF
Пакет TO-252-3,DPak(2Leads+Tab),SC-63
Лист данных IRLR3636TRPBF DataSheet
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Спецификации

Package	Bulk
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	6.8mOhm @ 50A, 10V
Vgs(th)(Max)@Id	2.5V @ 100µA
GateCharge(Qg)(Max)@Vgs	49 nC @ 4.5 V
Vgs(Max)	±16V
InputCapacitance(Ciss)(Max)@Vds	3779 pF @ 50 V
PowerDissipation(Max)	143W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D-Pak

Обзор

Description

IRLR3636TRPBF appears to be a course or subject code, likely related to Industrial Relations or Labor Relations, as indicated by the "IRL" prefix. The course may cover topics such as employment law, labor economics, negotiation strategies, and the dynamics between employers and employees. It could also explore the impact of policies, unions, and workplace practices on labor relations.
If this is part of a specific academic program, it may aim to equip students with theoretical knowledge and practical skills essential for navigating and managing workplace relationships effectively.
For detailed information, such as course objectives, prerequisites, and topics covered, it is best to consult the official course syllabus or the institution offering it.

Features

The IRLR3636TRPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (Id) up to 62A, allowing it to manage substantial loads.
3. RDS(on): It exhibits a low on-resistance (RDS(on)) of around 10 mΩ at Vgs = 10V, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is typically between 2V and 4V, facilitating easy driving.
5. Package: It comes in a TO-220 package, which aids in heat dissipation.
6. Fast Switching: The device is optimized for fast switching speeds, making it ideal for applications in power management, motor control, and DC-DC converters.
Overall, the IRLR3636TRPBF is an efficient and robust component for various electronic applications.

Package

The IRLR3636TRPBF is packaged in a TO-220AB type, which is a standard package for power MOSFETs. This package provides good thermal performance and is suitable for various applications requiring efficient power management.

Pinout

The IRLR3636TRPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow between the drain and source.
2. Drain (D): This pin is where the load is connected. The drain allows current to flow out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply. Current flows into the source when the MOSFET is conducting.
The IRLR3636TRPBF is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IRLR3636TRPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on various industries such as automotive, industrial, and consumer electronics, providing products that enhance energy efficiency and connectivity. Infineon is recognized for its commitment to innovation and sustainability in semiconductor technology.

Application

The IRLR3636TRPBF is an N-channel MOSFET commonly used in various applications, including power management, motor control, DC-DC converters, and switching applications. It is suited for high-frequency and high-efficiency power systems due to its low on-resistance and fast switching capabilities. Additionally, it's utilized in consumer electronics, automotive systems, and renewable energy systems for efficient power handling and regulation.

Equivalent

The IRLR3636TRPBF is an N-channel MOSFET. Equivalent products include:
1. AO3400
2. STP16NF06
3. IRF3205
4. BSS138
5. FQP30N06L
Always verify specifications like voltage, current ratings, and package type before substituting components.

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УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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