IRLR120NTRPBF

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IRLR120NTRPBF

MOSFET N-CH 100V 10A DPAK

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Спецификации

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4V, 10V
RdsOn(Max)@IdVgs 185mOhm @ 6A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 5 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 440 pF @ 25 V
PowerDissipation(Max) 48W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Обзор

Description

IRLR120NTRPBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power switching applications. It features a low on-resistance, making it suitable for high-efficiency power management in various electronics, such as DC-DC converters and power supplies. The device operates with a maximum drain-source voltage of 30V and a continuous drain current of up to 60A, allowing it to handle significant power loads. Its fast switching capabilities and thermal stability make it ideal for applications requiring rapid on/off control, such as motor drivers and inverters. The package type, typically a TO-220 or DPAK, facilitates effective heat dissipation. The "NTRPBF" suffix indicates that it is manufactured using a "RoHS-compliant" process, ensuring it meets environmental regulations regarding hazardous substances. Overall, IRLR120NTRPBF is a versatile component for engineers and designers focused on efficient power management solutions.

Features

The IRLR120NTRPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications such as power management and switching. Key features include:
1. Voltage Rating: Maximum drain-source voltage of 30V, suitable for low-voltage applications.
2. Current Rating: Continuous drain current of up to 120A, allowing for high power handling.
3. RDS(on): Low on-resistance (typically around 0.03 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate-to-source threshold voltage (VGS(th)) around 2V to 4V, enabling operation with lower drive voltages.
5. Package: Available in a DPAK package, which provides good thermal performance and ease of mounting.
6. Fast Switching: High-speed switching capabilities make it suitable for applications requiring quick response times.
7. Thermal Resistance: Low thermal resistance for better heat dissipation, supporting high-power applications.
These features make the IRLR120NTRPBF ideal for automotive, industrial, and consumer electronics applications.

Package

The IRLR120NTRPBF is packaged in a TO-220 format, which is a standard package type for power MOSFETs. This type offers good thermal performance and allows for easy mounting on heatsinks.

Pinout

The IRLR120NTRPBF is an N-channel MOSFET that comes in a TO-220 package with a pin count of three. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to the ground or negative side of the power supply.
This MOSFET is designed for high-speed switching applications and is characterized by low on-resistance (Rds(on)) and high current carrying capability, making it suitable for power management and motor control applications. It can handle a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 120A, depending on thermal management.

Manufacturer

The IRLR120NTRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in developing and producing a wide range of semiconductor solutions, including power management, automotive, and industrial applications. The company is known for its innovative technologies that enhance energy efficiency, reliability, and performance in various electronic devices. Infineon serves numerous sectors, including automotive, industrial, security, and consumer electronics, contributing significantly to advancements in power electronics and system-on-chip solutions.

Application

The IRLR120NTRPBF is an N-channel MOSFET commonly used in various applications, including power management, motor control, and switching circuits. It is suitable for DC-DC converters, power amplifiers, and high-speed switching applications due to its low on-resistance and high current handling capability. Additionally, it is utilized in consumer electronics, automotive systems, and industrial equipment for efficient power distribution and load driving.

Equivalent

Equivalent products to the IRLR120NTRPBF include the STP16NF06, IRLZ44N, and FQP30N06L. These MOSFETs share similar characteristics such as voltage ratings and on-resistance suitable for similar applications. Always verify specifications to ensure compatibility before substitution.

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