Изображения являются только для ссылки

IRLML6402TR

Name: IRLML6402TR
Rating: 4.7 (12 reviews)

MOSFET P-CH 20V 3.7A SOT-23

Производитель
Мфр. Часть #IRLML6402TR
Пакет
Лист данных IRLML6402TR DataSheet
В наличии21491

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Supplier	Infineon Technologies
Package	Cut Tape (CT)
ProductStatus	Obsolete
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	20 V
Current-ContinuousDrain(Id)@25°C	3.7A (Ta)
RdsOn(Max)@IdVgs	65mOhm @ 3.7A, 4.5V
Vgs(th)(Max)@Id	1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs	12 nC @ 5 V
InputCapacitance(Ciss)(Max)@Vds	633 pF @ 10 V
MountingType	Surface Mount
SupplierDevicePackage	Micro3™/SOT-23

Обзор

Description

The IRLML6402TR is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance (R_DS(on)), which minimizes power loss and heat generation, making it suitable for efficient power conversion and management. With a maximum continuous drain current rating of 4.2 A and a gate-source voltage (V_GS) rating of ±20 V, it operates effectively in various electronic circuits, including load switching and power supply management.
The device is housed in a compact SOT-23 package, facilitating easy integration into space-constrained designs. It is particularly favored in battery-operated devices due to its low gate threshold voltage (V_GS(th)), allowing it to turn on at lower voltages. The IRLML6402TR is commonly used in applications such as DC-DC converters, motor drivers, and power management systems. Its robust performance, combined with its compact size, makes it a popular choice among engineers for efficient circuit design.

Features

The IRLML6402TR is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 4.2A, with a peak pulsed current of 6A.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) of approximately 0.045Ω at V_GS = 10V, it ensures minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient switching at lower gate voltages.
5. Package Type: It comes in a compact SOIC-8 package, providing ease of integration into PCB designs.
6. Fast Switching Speed: This MOSFET offers fast switching capabilities, making it suitable for pulse-width modulation (PWM) applications.
Overall, the IRLML6402TR is ideal for power management, load switching, and other general-purpose applications requiring high efficiency.

Package

The IRLML6402TR is packaged in a small, surface-mount SO-8 (Small Outline Integrated Circuit) package type, which is designed for efficient thermal management and compact layouts in electronic circuits.

Pinout

The IRLML6402TR is a dual N-channel MOSFET housed in a Surface-Mount Device (SMD) package, specifically a SOT-23 package. It has a total of 5 pins. The pin functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
The device is primarily used in low-voltage applications such as switching and amplification, providing efficient control over power management in various electronic circuits.

Manufacturer

The IRLML6402TR is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovations in various fields, such as energy efficiency and mobility solutions, and it plays a significant role in the semiconductor industry with a focus on enabling sustainable technologies.

Application

The IRLML6402TR is a power MOSFET primarily used in applications such as low-side switching, load management, and power distribution in DC-DC converters. Its low on-resistance and fast switching characteristics make it suitable for battery management systems, portable devices, and LED drivers. Additionally, it can be utilized in motor control and automotive applications due to its efficiency and thermal performance.

Equivalent

The IRLML6402TR is an N-channel MOSFET. Equivalent products include:
1. BSS138
2. 2N7000
3. BS170
4. AO3400
5. SI2302
Always verify specifications, such as voltage and current ratings, to ensure compatibility with your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.