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IRFU3910PBF

Name: IRFU3910PBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 16A IPAK

Производитель
Мфр. Часть #IRFU3910PBF
Пакет
Лист данных IRFU3910PBF DataSheet
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Спецификации

Series	HEXFET®
Part Status	Obsolete
Base Product Number	IRFU3910
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	640 pF @ 25 V
Power Dissipation (Max)	79W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251AA)
Package	TO-251-3 Short Leads, IPAK, TO-251AA
Packaging	Tube

Обзор

Description

IRFU3910PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power management applications. It features a low on-resistance (RDS(on)) and fast switching capabilities, making it suitable for various applications such as power supplies, motor drivers, and DC-DC converters. The device is housed in a compact package, facilitating efficient thermal management and space-saving designs.
Key specifications include a maximum drain-source voltage (VDS) and a high continuous drain current (ID), allowing it to handle significant power levels. Its low gate threshold voltage (VGS(th)) enables easy drive from standard logic level signals. Additionally, IRFU3910PBF is compliant with RoHS standards, ensuring it is environmentally friendly.
Overall, this MOSFET is ideal for engineers and designers seeking reliable and efficient solutions for modern electronic devices and systems.

Features

The IRFU3910PBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
- Voltage Rating: 30V maximum, suitable for low-voltage applications.
- Current Rating: Capable of handling up to 90A continuous current, making it ideal for power management.
- RDS(on): Low on-resistance (typically around 9 mΩ at VGS of 10V), which minimizes power loss and heat generation.
- Gate Threshold Voltage (VGS(th)): Typically 1-2V, allowing for efficient switching at lower gate voltages.
- Package Type: Available in a TO-220 package, facilitating better heat dissipation during operation.
- Fast Switching Speed: Suitable for high-frequency applications, enhancing overall performance.
- Applications: Commonly used in DC-DC converters, inverters, and motor control systems.
Overall, the IRFU3910PBF is optimized for high-performance power management applications, ensuring reliability and efficiency.

Package

The IRFU3910PBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power transistors and MOSFETs.

Pinout

The IRFU3910PBF is a N-channel MOSFET with a total of 6 pins. Its primary functions include acting as a switch or amplifier in electronic circuits, particularly in power management applications.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching operation.
2. Drain (D) - The output where the current flows out when the MOSFET is on.
3. Source (S) - The terminal where the current enters when the device is in operation.
4. Body (B) - Internal body diode; typically connected to the source.
The IRFU3910PBF is designed for high-speed switching and can handle significant voltage and current levels, making it suitable for applications in power supplies, motor control, and other electronic systems requiring efficient power management.

Manufacturer

The IRFU3910PBF is manufactured by Texas Instruments (TI), a multinational semiconductor company based in the United States. Texas Instruments is known for designing and manufacturing a wide range of electronic components, including analog and digital signal processing chips, microcontrollers, and power management devices. The company primarily serves various industries, including automotive, industrial, communications, and consumer electronics. Established in 1930, TI has a long history of innovation in the electronics sector and is recognized for its contributions to the development of integrated circuits and other advanced technologies.

Application

The IRFU3910PBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and switching power supplies. It provides high efficiency and fast switching capabilities, making it suitable for applications in automotive electronics, industrial automation, and consumer electronics. Its low on-resistance and high current handling make it ideal for high-performance power switching tasks.

Equivalent

The IRFU3910PBF is an N-channel MOSFET. Equivalent products include the NTD4906N, BSS138, and STP16NF06. Always check the specifications for voltage, current ratings, and package compatibility to ensure proper substitution.

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