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IRFHM4234TRPBF

Name: IRFHM4234TRPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 25V 20A PQFN

Производитель
Мфр. Часть #IRFHM4234TRPBF
Пакет
Лист данных IRFHM4234TRPBF DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	FASTIRFET™, HEXFET®
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	25 V
Current-ContinuousDrain(Id)@25°C	20A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	4.4mOhm @ 30A, 10V
Vgs(th)(Max)@Id	2.1V @ 25µA
GateCharge(Qg)(Max)@Vgs	17 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1011 pF @ 13 V
PowerDissipation(Max)	2.8W (Ta), 28W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount

Обзор

Description

IRFHM4234TRPBF appears to be a specific code or identifier, possibly related to a product, part, or model number. Unfortunately, without additional context, it is difficult to provide a precise introduction or explanation. Typically, such codes are used in sectors like electronics, manufacturing, or logistics to denote specific items, including features, specifications, or compatibility. If you have more details regarding the context—such as the industry or type of product associated with this code—I would be glad to offer a more tailored response.

Features

The IRFHM4234TRPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (Vds) of up to 30V, making it suitable for low to moderate voltage applications.
2. Current Rating: It can handle continuous drain currents (Id) of around 36A, providing substantial power handling capability.
3. Low On-Resistance: The device features a low Rds(on) (around 0.025 ohms), which minimizes power loss and heat generation in switching applications.
4. Fast Switching Speed: It offers rapid switching times, enhancing efficiency in power conversion and switching circuits.
5. Thermal Management: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically low, enabling efficient drive with standard logic-level signals.
These features make the IRFHM4234TRPBF suitable for various applications, including power management, motor control, and DC-DC converters.

Package

The IRFHM4234TRPBF is packaged in a TO-220 package type. This package provides efficient thermal performance and is commonly used for power MOSFETs in various applications.

Pinout

The IRFHM4234TRPBF is a N-channel MOSFET with a pin count of 8. It is commonly used in power management applications due to its low RDS(on) and fast switching capabilities.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET operation (turns it on/off).
2. Drain (D) - The terminal through which current flows out when the device is on.
3. Source (S) - The terminal through which current enters when the device is on.
4. Tab/Heatsink - Often connected to the source for thermal management.
The device is suitable for high-efficiency applications and can handle a maximum drain-source voltage of 30V and a continuous drain current of up to 34A. Its compact package design makes it ideal for space-constrained environments.

Manufacturer

The IRFHM4234TRPBF is manufactured by Infineon Technologies AG, a prominent global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security solutions. The company serves various industries such as automotive, industrial, communication, and consumer electronics, focusing on energy efficiency, mobility, and security applications. Infineon is recognized for its innovation in power management and has a strong commitment to sustainability and environmental responsibility.

Application

The IRFHM4234TRPBF is a power MOSFET used in various applications, including DC-DC converters, motor control, and power management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, electric vehicles, and renewable energy systems, such as solar inverters. Additionally, it's utilized in consumer electronics and industrial automation for efficient power delivery.

Equivalent

The IRFHM4234TRPBF is a high-speed MOSFET with combined N-channel and P-channel functions. Equivalent products include the IRFHM4230TRPBF and the BSS84 (for P-channel), and the BSS138 (for N-channel) in similar applications. Be sure to check specifications like voltage, current ratings, and package type to ensure compatibility.

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компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

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