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IRFH5301TRPBF

Name: IRFH5301TRPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 35A/100A PQFN

Производитель
Мфр. Часть #IRFH5301TRPBF
Пакет
Лист данных IRFH5301TRPBF DataSheet
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Спецификации

Series	HEXFET®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5114 pF @ 15 V
Power Dissipation (Max)	3.6W (Ta), 110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PQFN (5x6) Single Die
Package / Case	8-PowerVDFN
Base Product Number	IRFH5301

Обзор

Description

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Features

The IRFH5301TRPBF is a high-performance MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: The device has a maximum V_DS (drain-source voltage) of 30V, suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 58A, making it ideal for high-current applications.
3. R_DS(on): It offers a low on-resistance (typically around 8.5 mΩ at V_GS = 10V), which reduces power losses during operation.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, enhancing efficiency in switching power supplies.
5. Package Type: Available in a TO-220 package, it provides good thermal performance allowing for better heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, facilitating easy drive with standard logic levels.
These features make the IRFH5301TRPBF suitable for various applications, including DC-DC converters, motor drivers, and power switches.

Package

The IRFH5301TRPBF is packaged in a TO-220 style package, which is designed for efficient heat dissipation and can handle high power applications.

Pinout

The IRFH5301TRPBF is an N-channel MOSFET with a total of 8 pins. Here’s the pin count and their functions:
1. Gate (G) - Controls the MOSFET operation by allowing or blocking current based on the voltage applied.
2. Drain (D) - The output terminal where the current flows out when the device is on.
3. Source (S) - The terminal through which the current enters the MOSFET when it is conducting.
4. Bulk (B) - Internal connection for substrate; typically connected to source.
The pin configuration is typically in a TO-220 package format, with the gate, drain, and source arranged for easy mounting and heat dissipation. This MOSFET is designed for high-efficiency power switching applications with low on-resistance and fast switching capabilities.
For specific circuit designs, refer to the manufacturer's datasheet for detailed electrical characteristics and additional application notes.

Manufacturer

The IRFH5301TRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive electronics, and communication technologies. The company focuses on innovative products for various applications, such as renewable energy, electric vehicles, and smart devices. Infineon plays a significant role in advancing technology for a more connected and sustainable world.

Application

The IRFH5301TRPBF is a N-channel MOSFET primarily used in power management applications. Its areas of application include DC-DC converters, power supplies, motor drives, and load switching. It is suitable for high-efficiency circuits, enabling efficient energy conversion and control in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The IRFH5301TRPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and AUIRF5301. Always check specific datasheets for exact specifications and characteristics to ensure compatibility.

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