Изображения являются только для ссылки

IRFH5210TRPBF

Name: IRFH5210TRPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 10A/55A 8PQFN

Производитель
Мфр. Часть #IRFH5210TRPBF
Пакет PQFN-8
Лист данных IRFH5210TRPBF DataSheet
В наличии7141

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	10A (Ta), 55A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	14.9mOhm @ 33A, 10V
Vgs(th)(Max)@Id	4V @ 100µA
GateCharge(Qg)(Max)@Vgs	59 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	2570 pF @ 25 V
PowerDissipation(Max)	3.6W (Ta), 104W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-PQFN (5x6)

Обзор

Description

IRFH5210TRPBF is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. This component is characterized by its low on-resistance, high-speed switching capabilities, and enhanced thermal performance, making it suitable for power management, DC-DC converters, and inverter circuits. The "IR" prefix indicates it's part of International Rectifier’s product line, known for robust semiconductor solutions. The "TRPBF" suffix signifies that the part is RoHS-compliant, meaning it is free from hazardous substances, aligning with environmental regulations. Its compact package design allows for efficient thermal dissipation and ease of integration into various electronic circuits. Overall, IRFH5210TRPBF is favored in applications requiring reliability and efficiency in power delivery.

Features

The IRFH5210TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for a wide range of applications.
2. Current Rating: The continuous drain current (I_D) is rated at 100A, enabling it to handle significant load demands.
3. R_DS(on): It offers a low on-resistance of approximately 9.5 mΩ at V_GS = 10V, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching.
5. Package: It comes in a TO-220 package, which facilitates heat dissipation and is compatible with various mounting technologies.
6. Applications: Ideal for use in power supplies, motor control, and other high-frequency applications.
Overall, the IRFH5210TRPBF is an effective choice for designers looking for high performance in power electronics.

Package

The IRFH5210TRPBF is packaged in a DPAK (TO-252) package type. This surface-mount package is designed for high-power applications, offering efficient thermal performance and ease of handling.

Pinout

The IRFH5210TRPBF is an N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's operation by regulating the voltage applied.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is on.
3. Source (S) - The terminal through which the current enters when the MOSFET is on.
4-8. Additional Pins - These typically include various connections for thermal and electrical performance, depending on the package type.
The IRFH5210TRPBF is designed for high-speed switching applications in power management and is commonly used in DC-DC converters, power supplies, and motor control systems. It features low on-resistance and high-speed switching capabilities, making it suitable for efficient power applications.

Manufacturer

The IRFH5210TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, and sensors for various applications including automotive, industrial, and consumer electronics. The company is known for its innovation in power management and efficiency solutions, catering to the growing demand for energy-efficient technologies. Infineon plays a significant role in the development of semiconductor technologies that support sustainable energy and smart mobility.

Application

The IRFH5210TRPBF is a N-channel MOSFET commonly used in power management applications. Its applications include DC-DC converters, power supplies, motor control, and load switching in consumer electronics, industrial equipment, and automotive systems. Its low on-resistance and high efficiency make it suitable for diverse power applications, enhancing performance and energy efficiency.

Equivalent

The IRFH5210TRPBF is a N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and BUK9565-55. Always confirm specifications like voltage, current rating, and package type before substituting components.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.