Изображения являются только для ссылки

IRFB5620PBF

Name: IRFB5620PBF
Rating: 4.7 (12 reviews)

IRFB5620 - 12V-300V N-CHANNEL PO

Производитель
Мфр. Часть #IRFB5620PBF
Пакет TO-220-3
Лист данных IRFB5620PBF DataSheet
В наличии2058

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Bulk
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	25A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	72.5mOhm @ 15A, 10V
Vgs(th)(Max)@Id	5V @ 100µA
GateCharge(Qg)(Max)@Vgs	38 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1710 pF @ 50 V
PowerDissipation(Max)	144W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

Обзор

Description

The IRFB5620PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 80A, making it suitable for various switching and amplification tasks in power management circuits. The device is characterized by its low on-resistance (Rds(on)), typically around 9.7 mΩ, which minimizes power loss and heat generation during operation.
The IRFB5620PBF is built using advanced trench technology, allowing for fast switching speeds and high thermal performance. It comes in a TO-220 package, which facilitates effective heat dissipation. This MOSFET is commonly used in applications such as DC-DC converters, motor drivers, and inverters. Additionally, it is compliant with RoHS regulations, indicating it is free from hazardous substances.
Overall, the IRFB5620PBF is a robust choice for engineers seeking efficient and reliable power solutions in their designs.

Features

The IRFB5620PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: Maximum V_DS (drain-source voltage) of 60V.
- Current Rating: Continuous drain current (I_D) of up to 50A.
- R_DS(on): Low on-resistance of 0.022 ohms at V_GS of 10V, enabling reduced conduction losses.
- Gate Threshold Voltage: V_GS(th) of 2-4V, allowing for efficient gate drive operation.
- Power Dissipation: Maximum power dissipation of 94W, ensuring robust thermal performance.
- Fast Switching: Suitable for high-frequency applications due to fast switching speeds.
- Package Type: Typically available in a TO-220 or D2PAK package, promoting effective heat dissipation.
These features make the IRFB5620PBF suitable for various applications including DC-DC converters, motor drives, and other power management systems.

Package

The IRFB5620PBF is typically packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used in power applications.

Pinout

The IRFB5620PBF is an N-channel power MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is connected to the load. It is the output terminal where current flows out of the MOSFET.
3. Source (S): This pin is connected to ground or the negative side of the power supply and serves as the return path for the current.
The IRFB5620PBF is designed for high-efficiency switching applications, featuring low on-resistance and high-speed switching capabilities.

Manufacturer

The IRFB5620PBF is manufactured by Infineon Technologies AG, a leading semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing, developing, and producing a wide range of semiconductor products, including power management solutions, automotive electronics, and security technology. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on innovative solutions that enhance efficiency, safety, and connectivity in modern applications. Infineon is recognized for its commitment to quality and sustainability in the semiconductor market.

Application

The IRFB5620PBF is an N-channel MOSFET primarily used in applications such as power supplies, motor drives, and inverter circuits. Its high efficiency and low on-resistance make it suitable for high-frequency switching applications, including DC-DC converters and renewable energy systems like solar inverters. Additionally, it can be utilized in automotive applications for power management and control.

Equivalent

Equivalent products to the IRFB5620PBF include the STP75NF75, FDD844P, and AUIRFB5620. These MOSFETs have similar specifications, such as voltage and current ratings. Always check the datasheets for exact parameters and characteristics to ensure compatibility with your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.