Изображения являются только для ссылки

IRFB52N15DPBF

Name: IRFB52N15DPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 150V 51A TO220AB

Производитель
Мфр. Часть #IRFB52N15DPBF
Пакет TO-220-3
Лист данных IRFB52N15DPBF DataSheet
В наличии4018

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tube
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	150 V
Current-ContinuousDrain(Id)@25°C	51A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	32mOhm @ 36A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	89 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	2770 pF @ 25 V
PowerDissipation(Max)	3.8W (Ta), 230W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

Обзор

Description

The IRFB52N15DPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power management applications. It features a low on-resistance, which minimizes conduction losses and improves efficiency in power conversion and switching applications. With a voltage rating of 150V and a current rating of up to 52A, it is suitable for use in various circuits, including motor drives, power inverters, and DC-DC converters.
The device is housed in a TO-220 package, which provides effective thermal performance and easy mounting. Its fast switching capabilities make it ideal for high-frequency applications. The "DPBF" suffix indicates that it is part of the "Pb-free" series, meaning it complies with RoHS regulations for environmental safety.
Overall, the IRFB52N15DPBF is a reliable choice for designers seeking efficient and durable components for their power electronic systems.

Features

The IRFB52N15DPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 150V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of up to 52A at 25°C.
3. On-Resistance (R_DS(on)): Low on-resistance of approximately 0.065 ohms, which enhances power efficiency and minimizes heat generation.
4. Gate Threshold Voltage (V_GS(th)): Typically around 2-4V, allowing for easy drive with low gate voltages.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: High-speed switching capabilities make it suitable for applications in power supplies, motor drivers, and DC-DC converters.
7. Thermal Resistance: Low thermal resistance ensures better performance under high load conditions.
Overall, the IRFB52N15DPBF is ideal for demanding applications requiring robust performance and reliability.

Package

The IRFB52N15DPBF is packaged in a TO-220 form factor. This package type is commonly used for power transistors, offering good thermal performance and ease of mounting on heatsinks.

Pinout

The IRFB52N15DPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): The source pin is where the current exits the MOSFET when it is conducting.
The IRFB52N15DPBF is designed for high efficiency and performance in power applications, with a maximum voltage rating of 150V and a continuous current rating of up to 52A. It is commonly used in switching power supplies, motor drives, and other high-power applications.

Manufacturer

The IRFB52N15DPBF is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon specializes in the development and production of a wide range of semiconductor solutions, particularly in power management, automotive electronics, and security systems. The company is known for its advanced technologies in areas such as power semiconductors, microcontrollers, and sensors. Infineon serves various industries, including automotive, industrial, and consumer electronics, providing innovative products that enhance energy efficiency, safety, and connectivity.

Application

The IRFB52N15DPBF is a N-channel MOSFET primarily used in power management applications. Its key application areas include power supplies, motor drives, DC-DC converters, and renewable energy systems like solar inverters. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities, making it ideal for automotive, industrial, and consumer electronics.

Equivalent

The IRFB52N15DPBF is a N-channel MOSFET with a voltage rating of 150V and a current rating of 52A. Equivalent products include:
1. STP55NF15 - 150V, 55A
2. FQP50N15 - 150V, 50A
3. MTP50N15 - 150V, 50A
4. IRF150 - 150V, 38A
Always verify the specifications to ensure compatibility for your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.