IRFB3806PBF

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IRFB3806PBF

MOSFET N-CH 60V 43A TO220AB

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Спецификации

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 43A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15.8mOhm @ 25A, 10V
Vgs(th)(Max)@Id 4V @ 50µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1150 pF @ 50 V
PowerDissipation(Max) 71W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Обзор

Description

The IRFB3806PBF is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a low on-resistance (R_DS(on)) of approximately 4.5 mΩ, enabling efficient power conversion and reduced energy loss. With a maximum continuous drain current rating of 120A and a maximum drain-source voltage (V_DS) of 60V, it is suitable for various applications, including motor drives, power supplies, and converters.
This MOSFET is notable for its fast switching capabilities, which help enhance system efficiency and minimize heat generation in high-frequency designs. It comes in the TO-220 package, providing effective thermal management. Additionally, the IRFB3806PBF is RoHS-compliant, ensuring it meets environmental regulations.
Overall, the IRFB3806PBF is ideal for designers seeking robust performance in power electronics, especially in applications requiring high current handling and low conduction losses.

Features

The IRFB3806PBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 60V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 110A, allowing for efficient power management.
3. Low On-Resistance: With a maximum Rds(on) of 6.5 mΩ at a gate-source voltage (Vgs) of 10V, it minimizes power losses and heat generation during operation.
4. Fast Switching: Designed for high-speed switching applications, it helps improve efficiency in converters and inverters.
5. Thermal Characteristics: It offers good thermal performance with a maximum junction temperature of 175°C.
6. TO-220 Package: This package provides excellent thermal dissipation and ease of handling in circuit designs.
7. RoHS Compliant: The IRFB3806PBF is compliant with RoHS standards, ensuring it is environmentally friendly.
These features make the IRFB3806PBF suitable for applications in power supplies, motor drives, and other high-current switching applications.

Package

The IRFB3806PBF is typically packaged in a TO-220 format, which is a metal can package designed for high-power applications. This package type provides effective heat dissipation and is commonly used in power MOSFET applications.

Pinout

The IRFB3806PBF is an N-channel MOSFET with a pin count of 5. Its pin configuration includes:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the main current flows out.
3. Source (S) - The terminal through which current enters the MOSFET.
The device is designed for high-speed switching applications and is commonly used in power management, motor control, and other applications requiring efficient power handling. It features low on-resistance and high-speed switching capabilities, making it suitable for applications in power supply circuits and other high-efficiency designs.

Manufacturer

The IRFB3806PBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is a German company that specializes in the development and production of a wide range of semiconductor products, including power management, automotive, industrial, and security applications. The company focuses on innovative technologies to enhance energy efficiency and enable sustainable solutions across various sectors. Infineon is known for its expertise in power semiconductors, such as MOSFETs and IGBTs, as well as microcontrollers and sensors, making it a key player in the electronics industry.

Application

The IRFB3806PBF is an N-channel MOSFET commonly used in applications such as power supplies, DC-DC converters, motor drives, and automotive systems. Its high efficiency and fast switching capabilities make it suitable for low and high-frequency applications, including renewable energy systems like solar inverters and electric vehicle powertrains. Additionally, it is used in various consumer electronics and industrial equipment for efficient power management.

Equivalent

The IRFB3806PBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75 - STMicroelectronics
2. FQP75N06L - Fairchild Semiconductor
3. AOD6N60 - AOS Technologies
4. BSS138 - NXP Semiconductors (for lower voltage applications)
Always verify specifications such as Vds, Id, Rds(on), and package type for compatibility before substitution.

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