IRFB3307PBF

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IRFB3307PBF

MOSFET N-CH 75V 130A TO220AB

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Спецификации

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 130A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6.3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 180 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5150 pF @ 50 V
PowerDissipation(Max) 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Обзор

Description

IRFB3307PBF is an N-channel MOSFET designed for high-performance applications in power management and switching. It features low on-resistance (RDS(on)), which minimizes power loss and improves efficiency, making it suitable for use in power supplies, DC-DC converters, and motor controllers. The device can handle high current levels and offers a wide voltage range, enabling it to be utilized in various electronic circuits.
This MOSFET is packaged in a TO-220 format, allowing for effective heat dissipation and ease of integration into existing designs. The part number indicates that it is a part of the IRFB family, known for reliability and robustness in demanding environments. Key specifications include a maximum drain-source voltage (VDS) of 75V and a continuous drain current (ID) of up to 120A, depending on operating conditions.
Overall, IRFB3307PBF is an excellent choice for engineers seeking efficient and reliable power semiconductor solutions in their designs.

Features

The IRFB3307PBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 75V, making it suitable for various power management applications.

2. Current Rating: The continuous drain current (Id) is up to 120A, allowing it to handle significant loads effectively.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 4.5 mΩ at Vgs = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, enabling it to operate efficiently in low-voltage applications.
5. Package Type: It is available in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: Designed for quick switching applications, it can reduce switching losses in power conversion tasks.
7. RoHS Compliant: The IRFB3307PBF is lead-free and compliant with RoHS standards, making it environmentally friendly.
These features make the IRFB3307PBF suitable for use in power supplies, motor control, and other demanding electronics applications.

Package

The IRFB3307PBF is packaged in a TO-220 format. This package type is designed for high-power applications and provides efficient heat dissipation, making it suitable for use in various electronic circuits, especially in power management and motor control.

Pinout

The IRFB3307PBF is an N-channel MOSFET with a total of 5 pins. Its pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate relative to the source turns the device on or off.
2. Drain (D): The drain pin is where the load is connected. It allows the current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin represents the common return path for the current flowing through the MOSFET. It connects to the negative side of the circuit.
4. Gate (G): Reiterated for clarity, this controls the switching function.
5. Case/Tab (not a pin): The case or tab is often connected to the source for thermal management.
The IRFB3307PBF is commonly used in power applications, including motor control and power management circuits, due to its high efficiency and low on-resistance.

Manufacturer

The IRFB3307PBF is manufactured by International Rectifier, a subsidiary of Infineon Technologies. International Rectifier is known for producing power management solutions, including MOSFETs, IGBTs, and other semiconductor products. The company specializes in high-performance power electronics, serving various industries such as automotive, industrial, and consumer electronics. Founded in 1947, it has established itself as a leader in power management technology, focusing on energy efficiency and advanced semiconductor solutions. Infineon Technologies, the parent company, is a global leader in semiconductor solutions, emphasizing automotive, industrial power control, and chip card and security applications.

Application

The IRFB3307PBF is an N-channel MOSFET primarily used in power management applications. Its key areas include:
1. DC-DC converters: Efficient power conversion for various electronics.
2. Motor drives: Controlling electric motors in industrial and automotive applications.
3. Power supplies: Enhancing efficiency in switch-mode power supplies (SMPS).
4. Inverters: Used in renewable energy systems, such as solar inverters.
5. HEV/EV applications: Power management in hybrid and electric vehicles.
Its low RDS(on) and high-speed switching capabilities make it suitable for these applications.

Equivalent

Equivalent products to the IRFB3307PBF MOSFET include the STP75NF75, FDS8880, and AOD4815. Ensure to check specifications such as voltage, current ratings, and RDS(on) values for compatibility in your application.

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