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IRF840

Name: IRF840
Rating: 4.7 (12 reviews)

MOSFET N-CH 500V 8A TO220AB

Производитель
Мфр. Часть #IRF840
Пакет TO-220-3
Лист данных
В наличии5011

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Спецификации

Package	Tube
Series	PowerMESH™ II
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	500 V
Current-ContinuousDrain(Id)@25°C	8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	850mOhm @ 3.5A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	39 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	832 pF @ 25 V
PowerDissipation(Max)	125W (Tc)
OperatingTemperature	150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220

Обзор

Description

The IRF840 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits. The device can handle continuous drain current (I_D) of up to 8A, with a pulsed current rating significantly higher. Its low on-resistance (R_DS(on)) of about 0.33 ohms at V_GS = 10V ensures efficient power transfer and minimal heat generation during operation.
The IRF840 is primarily used in various applications, including power supplies, motor control, and switching applications due to its fast switching capabilities and robust performance in high-voltage environments. It is housed in standard TO-220 packaging, facilitating easy heat dissipation.
When designing circuits with the IRF840, proper gate driving techniques and thermal management are essential to ensure reliability and optimal performance.

Features

The IRF840 is a high-voltage N-channel MOSFET designed for various switching and amplification applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 8A, capable of handling substantial loads.
3. On-Resistance: Low R_DS(on) of approximately 0.33 ohms at V_GS = 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for effective switching control.
5. Fast Switching Speed: Suitable for high-frequency applications due to its rapid turn-on and turn-off characteristics.
6. Package Type: Available in TO-220 and other packages, facilitating easy integration into circuits.
7. Thermal Resistance: Good thermal performance with low junction-to-case thermal resistance (RθJC), enhancing reliability.
These features make the IRF840 ideal for applications in power supplies, motor control, and various electronic devices.

Package

The IRF840 is typically packaged in a TO-220 format, which is a three-lead package that offers good thermal performance and is suitable for power applications. Other package options may include TO-247 and DPAK, depending on specific applications and requirements.

Pinout

The IRF840 is a N-channel power MOSFET commonly used in high-voltage applications. It has a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): The drain pin is where the load is connected. It carries the current coming from the source and is typically connected to a higher voltage.
3. Source (S): The source pin is connected to the ground or the lower potential side of the circuit. It serves as the reference point for the gate voltage.
The IRF840 is known for its high voltage rating (up to 500V) and can handle high current levels, making it suitable for power supplies, motor control, and other applications requiring efficient switching.

Manufacturer

The IRF840 is manufactured by International Rectifier, a company that specializes in power management technologies. International Rectifier, founded in 1947, focuses on developing and producing semiconductors for various applications, including power MOSFETs, voltage regulators, and integrated circuits used in automotive, industrial, and consumer electronics markets. In 2015, International Rectifier was acquired by Infineon Technologies, a global leader in semiconductor solutions that enhance energy efficiency. This acquisition expanded Infineon’s portfolio in power management and reinforced its position in the semiconductor industry. The IRF840 itself is a high-voltage N-channel MOSFET, widely used for high-efficiency power switching applications.

Application

The IRF840 is a N-channel MOSFET primarily used in power electronics applications. Its main areas include switch mode power supplies, motor drives, power inverters, and high-frequency switching applications. It is also utilized in electronic ballast circuits, as well as in automotive and industrial applications for efficient power management and conversion.

Equivalent

Equivalent products to the IRF840 MOSFET include the IRF840PBF, STP40NF10, FQP30N06L, and MTP50N06. These alternatives generally match key specifications like voltage and current ratings, but it's essential to verify electrical characteristics such as RDS(on), gate threshold voltage, and package type for specific applications.

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